1
Itoh Kiyoo, Tsuchiya Ryuta, Kawahara Takayuki: Semiconductor devices. Hitachi, January 17, 2007: EP1744364-A2 (20 worldwide citation)

The invention relates to a CMOS circuit in low-voltage implementation, low power-consumption implementation, high-speed implementation, or small-size implementation. In a circuit (INV) which uses a FD-SOI MOST where a back gate (20) is controlled by a well (25), voltage amplitude at the well (25) is ...


2
Osada Kenichi, Kawahara Takayuki: Semiconductor device. Renesas Technology, June 15, 2006: JP2006-155700 (17 worldwide citation)

PROBLEM TO BE SOLVED: To provide a technology which can suppress variations of values after writing to the minimum, and facilitate multiple value coding in a semiconductor device such as a phase transition memory.SOLUTION: The semiconductor device has; a memory cell including a storage element (phas ...


3
Itou Akitomo, Takahashi Hiromasa, Kawahara Takayuki, Takemura Riichiro: Magnetic memory element. Hitachi, November 15, 2007: JP2007-300079 (14 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for reducing power consumption of the magnetic memory element in a magnetic random access memory (MRAM).SOLUTION: The magnetic memory element has a magnetic tunnel junction (MTJ) including a ferromagnetic free layer, and exhibits a first relatively high resi ...


4
Watanabe Takao, Kitukawa Goro, Hori Ryoichi, Itoh Kiyoo, Kawajiri Yoshiki, Kawahara Takayuki: Semiconductor device having bipolar transistor and insulated gate field effect transistor.. Hitachi, January 28, 1987: EP0209805-A2 (11 worldwide citation)

A semiconductor device of high integration density and low power consumption prevents the influence of the amplitude of an input signal upon the amplitude of an output signal in such a way that a preceding circuit (C) and a succeeding circuit (D) are endowed with different reference voltages. In an ...


5
Okuno Hiromi, Koshina Hizuru, Hasegawa Katsuaki, Kawahara Takayuki: Nonaqueous electrolyte secondary batteries.. Matsushita Electric, Mitsubishi Petrochemical Co, March 17, 1993: EP0531617-A1 (10 worldwide citation)

Provided is a nonaqueous electrolyte secondary battery excellent in cycle life characteristic, stability in storage at high temperatures and low-temperature characteristic which is provided with an anode comprising a carbon material capable of doping and undoping lithium ion, a nonaqueous electrolyt ...


6
Osada Kenichi, Takemura Riichiro, Takaura Norikatsu, Matsuzaki Nozomi, Kawahara Takayuki: Semiconductor device. Renesas Technology, September 29, 2005: JP2005-267837 (10 worldwide citation)

PROBLEM TO BE SOLVED: To realize a stable operation at a low voltage in a semiconductor device, a semiconductor memory device, especially a nonvolatile memory, and a system LSI (microcomputer) on which the novolatile memory is mounted.SOLUTION: This semiconductor device includes: a plurality of memo ...


7
Takemura Riichiro, Kawahara Takayuki, Itou Akitomo, Takahashi Hiromasa: Semiconductor device. Hitachi, November 29, 2007: JP2007-311514 (8 worldwide citation)

PROBLEM TO BE SOLVED: To achieve a sufficient re-writing operation with fine memory cells and also to obtain a large reading electric current, while suppressing a reading disturbance concerning an MRAM using spin injection magnetization reversal.SOLUTION: When the free layer of a tunnel magnetoresis ...


8
Honda Yoneichi, Koizumi Mikio, Tamura Ikuo, Kawahara Takayuki: Method of manufacturing piston of internal combustion engine. Riken Forge, March 21, 2001: EP1084793-A1 (7 worldwide citation)

The top land section 2 and the skirt section 3 of a piston of an internal combustion engine are separately formed by forging a metal material that shows a satisfactory level of strength and can easily be cut. A ring member 9 of a thermally resistive metal material is bonded by forging to the periphe ...


9
Takemura Riichiro, Kurotsuchi Kenzo, Kawahara Takayuki: (Ja) 半導体装置, (En) Semiconductor device. Renesas Technology, Takemura Riichiro, Kurotsuchi Kenzo, Kawahara Takayuki, TSUTSUI Yamato, December 8, 2005: WO/2005/117118 (7 worldwide citation)

(EN) For example, a plurality of diffusion layers (L) are arranged in parallel with bit lines (BL). Gates (G) are arranged such that they intersect with the bit liens (BL) between the diffusion layers (L). A bit line contact (BC) and a source node contact (SC) are alternately arranged for each of a ...


10
Osada Kenichi, Yamaoka Masanao, Kawahara Takayuki: Semiconductor device. Renesas Technology, July 22, 2004: JP2004-207694 (6 worldwide citation)

PROBLEM TO BE SOLVED: To provide an MISFET of a threshold requested for the operation of a circuit in a semiconductor device using an SOI substrate.SOLUTION: A gate electrode of a P-channel MISFET constituting a memory cell is formed by N type polysilicon and a gate electrode of an N-channel MISFET ...



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