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Katherina Babich
Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu Song Huang, Arpan P Mahorowala, David R Medeiros, Ratnam Sooriyakumaran: Antireflective SiO-containing compositions for hardmask layer. International Business Machines Corporation, Steven Capella, International Bussiness Machines Corporation, October 23, 2003: US20030198877-A1

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope ...


22
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. Dr Daniel P Morris Esq, IBM Corporation, October 16, 2003: US20030194569-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


23
Katherina Babich
Katherina Babich, Alessandro Calleqari, Stephen Alan Cohen, Alfred Grill, Christophr Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Scully Scott Murphy & Presser, December 12, 2002: US20020185741-A1

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


24
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, February 10, 2005: US20050031964-A1

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


25
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. Dr Daniel P Morris Esq, IBM Corporation, January 31, 2002: US20020012876-A1

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


26
Katherina Babich
Noriaki Fukiage, Katherina Babich: Method for depositing materials on a substrate. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop, May 12, 2005: US20050100682-A1

A method and apparatus for depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process, wherein for at least a part of the deposition of the TERA film, the plasma-enhanced chemical vapor deposition process emplo ...


27
Katherina Babich
Noriaki Fukiage, Katherina Babich: Method of improving post-develop photoresist profile on a deposited dielectric film. Tokyo Electron, International Business Machines Corporation, Pillsbury Winthrop, May 12, 2005: US20050100683-A1

A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing t ...


28
Katherina Babich
Katherina Babich, Todd C Bailey, Richard A Conti, Ryan P Deschner: Mask forming and implanting methods using implant stopping layer. Hoffman Warnick, January 1, 2009: US20090004869-A1

Methods of forming a mask for implanting a substrate and implanting using an implant stopping layer with a photoresist provide lower aspect ratio masks that cause minimal damage to trench isolations in the substrate during removal of the mask. In one embodiment, a method of forming a mask includes: ...


29
Katherina Babich
Katherina Babich, Alessandro Callegari, Zhihong Chen, Edward Kiewra, Yanning Sun: Method to Improve Nucleation of Materials on Graphene and Carbon Nanotubes. International Business Machines Corporation, September 20, 2012: US20120235119-A1

Techniques for forming a thin coating of a material on a carbon-based material are provided. In one aspect, a method for forming a thin coating on a surface of a carbon-based material is provided. The method includes the following steps. An ultra thin silicon nucleation layer is deposited to a thick ...


30
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, February 24, 2005: US20050042538-A1

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...