1
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. International Business Machines Corporation, Daniel P Morris, February 4, 2003: US06514667 (53 worldwide citation)

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


2
Katherina Babich
Dirk Pfeiffer, Marie Angelopoulos, Katherina Babich, Phillip Brock, Wu Song Huang, Arpan P Mahorowala, David R Medeiros, Ratnam Sooriyakumaran: Antireflective SiO-containing compositions for hardmask layer. International Business Machines Corporation, Steven Capella, May 4, 2004: US06730454 (47 worldwide citation)

Antireflective compositions characterized by the presence of an SiO-containing polymer having chromophore moieties and transparent moieties are useful antireflective hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity prope ...


3
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, September 10, 2002: US06448655 (21 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


4
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, July 6, 2004: US06759321 (11 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


5
Katherina Babich
Katherina Babich, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer: Lithographic antireflective hardmask compositions and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, May 29, 2007: US07223517 (7 worldwide citation)

Compositions and techniques for the processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask composition is provided. The composition comprises a fully condensed polyhedral oligosilsesquioxane, {RSiO1.5}n, wherein n equals 8; and at least one chrom ...


6
Katherina Babich
Deok kee Kim, Kenneth T Settlemyer Jr, Kangguo Cheng, Ramachandra Divakaruni, Carl J Radens, Dirk Pfeiffer, Timothy Dalton, Katherina Babich, Arpan P Mahorowala, Harald Okorn Schmidt: Methods and structures for protecting one area while processing another area on a chip. International Business Machines Corporation, Whitman Curtis Christofferson & Cook PC, Joseph P Abate, March 3, 2009: US07497959 (4 worldwide citation)

Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided whi ...


7
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, January 19, 2010: US07648820 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


8
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, February 6, 2007: US07172849 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


9
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris Esq, Scully Scott Murphy & Presser, January 27, 2004: US06682860 (4 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


10
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Daniel P Morris Esq, Scully Scott Murphy & Presser, May 4, 2004: US06730445 (4 worldwide citation)

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...



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