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Tobita Tsunehiro, Kitahara Jun, Tsunehiro Takashi, Katayama Kunihiro, Hattori Ryuichi, Seki Yukihiro, Yamagami Hajime, Totsuka Takashi, Wada Takeshi, Takaya Yosio, Saito Manabu, Kaki Kenichi, Okubo Takao, Kikuchi Takashi, Kishi Masamichi, Suzuki Takeshi, Kadowaki Shigeru: Flash memory control method and information processing system therewith.. Hitachi, Hitachi Keiyo Eng, Hitachi Ulsi Eng, October 12, 1994: EP0619541-A2 (68 worldwide citation)

A control method and system when a flash memory is used as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a co ...


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Yamagami Hajime, Terada Kouichi, Hayashi Yoshihiro, Tsunehiro Takashi, Katayama Kunihiro, Kaki Kenichi, Furuno Takeshi: Storage device employing a flash memory.. Hitachi, June 30, 1993: EP0548564-A2 (32 worldwide citation)

In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in ...


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Tamura Takayuki, Kawagishi Tadahiro, Tsunehiro Takashi, Katayama Kunihiro, Nakamura Kazuo: Semiconductor memory file system. Hitachi, Hitachi Video &Amp Inf Syst, November 14, 2000: JP2000-315185 (16 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor memory file system using semiconductor memories having constitution advantageous to the formation of a large scale memory. SOLUTION: In the semiconductor memory file system consisting of a controller and plural semiconductor memories connected to the ...


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Katayama Kunihiro, Nakade Yoshiaki, Hashimoto Takumi, Kawasaka Yasuki, Shinagawa Masayuki: Data transmitter, communication terminal device, and data communication system and method. Sharp, April 20, 2006: JP2006-107292 (15 worldwide citation)

PROBLEM TO BE SOLVED: To carry out data communication favorably correspondingly to an environmental change in ambient temperature, electromagnetic waves and the like sufficiently in addition to the state of capacity, resistance, and the like of a cable, in the data communication using an LVDS interf ...


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Yugawa Yosuke, Katayama Kunihiro, Furusawa Kazunori, Kanamori Sakaki, Yomo Junji: Semiconductor integrated circuit and memory card. Hitachi, September 14, 2000: JP2000-250661 (12 worldwide citation)

PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit which can respond to an external indication even when it is supplied with only a source voltage lower than the operation guarantee voltage needed on the whole. SOLUTION: This circuit has a 1st circuit 2 having an external interface f ...


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Yugawa Yosuke, Katayama Kunihiro, Yomo Junji, Kanamori Sakaki, Furusawa Kazunori: Semiconductor integrated circuit and memory card. Hitachi, September 14, 2000: JP2000-250665 (12 worldwide citation)

PROBLEM TO BE SOLVED: To prevent unnecessary power consumption resulting from a halfway operating power source and malfunction when an external power source is inadequate to the operation guarantee voltage of the semiconductor integrated circuit. SOLUTION: An interface control circuit 2 inputs infor ...


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Ouchi Katsumi, Tamura Takayuki, Katayama Kunihiro: Control device for multi-level storage non-volatile semiconductor memory. Hitachi, October 24, 2000: JP2000-298992 (11 worldwide citation)

PROBLEM TO BE SOLVED: To improve reliability of a multi-level storage non-volatile semiconductor memory cell by storing data from a host device with less number of bits than the number of bits which can be stored by a memory cell so that deterioration of a memory cell caused by repetition of erasing ...


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Mizushima Eiga, Tsunoda Motoyasu, Hatano Tomihisa, Katayama Kunihiro, Tanaka Norio, Tsunehiro Takashi, Kimura Koichi: Storage unit with non-volatile memory and information processing device with freely detachable storage unit. Hitachi, March 28, 2003: JP2003-091704 (10 worldwide citation)

PROBLEM TO BE SOLVED: To make an IC execute a large amount of processing even when the storage capacity in the IC (for example, ROM and EERROM) is small.SOLUTION: This storage unit is provided with a flash memory chip 130, an IC card chip 150 capable of executing the security processing (encryption, ...


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Kanamori Sakaki, Katayama Kunihiro, Shiraishi Atsushi, Kurakata Shigeo, Yomo Junji: Non-volatile semiconductor storage device. Hitachi, Hitachi Ulsi Systems, March 14, 2003: JP2003-076615 (10 worldwide citation)

PROBLEM TO BE SOLVED: To provide a card storage device with a built-in non-volatile memory for shortening the required writing time and preventing the early deterioration of rewriting durability.SOLUTION: The card storage device in which the non-volatile memory and an error correcting circuit are bu ...


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Katayama Kunihiro, Mitsui Kazuto, Morita Sadayuki, Honma Kazuki: Semiconductor apparatus. Renesas Technology, March 8, 2007: JP2007-058966 (8 worldwide citation)

PROBLEM TO BE SOLVED: To comparatively simply realize refresh operation for a nonvolatile memory.SOLUTION: A flash memory (1) has a memory array (3) provided with a plurality of nonvolatile memory cells (2) in which write-in and erasure can be performed electrically, and a control circuit (5). The c ...