1
Karl Lichtenberger, Frederick P Giles, Christiana Yue, Kyle Terrill, Mohamed N Darwish, Deva Pattanayak, Kam Hong Lui, Robert Q Xu, Kuo in Chen: Self-aligned differential oxidation in trenches by ion implantation. Siliconix Incorporated, Patent Law Group, Rachel V Leiterman, March 14, 2006: US07012005 (11 worldwide citation)

In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall ...


2
Robert Q Xu, Kuo In Chen, Karl Lichtenberger, Sharon Shi, Qufei Chen, Kyle Terrill: Super-high density trench MOSFET. Vishay Siliconix, August 30, 2016: US09431530 (1 worldwide citation)

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown ...


3
Karl Lichtenberger, Frederick P Giles, Christiana Yue, Kyle Terrill, Mohamed N Darwish, Deva Pattanayak, Kam Hong Lui, Robert Q Xu, Kuo in Chen: Self-aligned differential oxidation in trenches by ion implantation. Siliconix Incorporated, Patent Law Group, December 25, 2003: US20030235959-A1

In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom and side wall ...


4
Robert Q Xu, Kuo In Chen, Karl Lichtenberger, Sharon Shi, Qufei Chen, Kyle Terrill: Super-high density trench mosfet. Vishay Siliconix, April 21, 2011: US20110089486-A1

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown ...