1
Kaoru Taketa, Takayuki Kaida: Split gate transistor array. Sanyo Electric Company, Sheridan Ross P C, August 17, 1999: US05939749 (30 worldwide citation)

A split gate transistor having a semiconductor substrate, a source region and a drain region formed on the semiconductor substrate. A channel region is formed between the source region and the drain region. A floating gate electrode is formed substantially above the channel region. The floating gate ...


2
Chiaki Kobayashi, Daisuke Sumi, Hiroshi Inamura, Togo Morifuji, Koji Yoshida, Masaki Endo, Sayaka Hiura, Takao Yamauchi, Syunsuke Yamaura, Kaoru Taketa, Kimihiko Nagami: Pressure sensor and method for fabricating the same. Sanyo Electric, Tottori Sanyo Electric, Arent Fox, October 9, 2007: US07278326 (15 worldwide citation)

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electro ...


3
Sayaka Hiura, Takao Yamauchi, Kaoru Taketa, Koji Yoshida, Masaki Endo: Pressure sensor and method for fabricating the same. Seiko Epson Corporation, Arent Fox, April 8, 2008: US07353719 (12 worldwide citation)

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electro ...


4
Norihiro Ikeda, Kaoru Taketa: Process for producing DRAM semiconductor devices. Sanyo Electric, Sheridan Ross & McIntosh, May 2, 1995: US05411911 (11 worldwide citation)

A process for producing a semiconductor device comprises the following steps 1 to 9. In step 1, a field oxide layer is formed on a first conductivity type semiconductor substrate to define an active region. In step 2, gate electrodes, second conductivity type source regions and drain regions are for ...


5
Takayuki Kato, Kaoru Taketa, Hiroki Sugiyama, Shinya Ibuki: Image pickup device, method of manufacturing the same, and image pickup display system. Japan Display, Michael Best & Friedrich, March 29, 2016: US09299737

An image pickup device includes a sensor substrate. The sensor substrate includes: plural photoelectric conversion elements and driving elements for the plural photoelectric conversion elements which are formed on a substrate; wirings electrically connected to the driving elements; and a shield elec ...


6
Chiaki Kobayashi, Daisuke Sumi, Hiroshi Inamura, Togo Morifuji, Koji Yoshida, Masaki Endo, Sayaka Hiura, Takao Yamauchi, Syunsuke Yamaura, Kaoru Taketa, Kimihiko Nagami: Pressure sensor and method for fabricating the same. Arent Fox Pllc, August 11, 2005: US20050172722-A1

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electro ...


7
Sayaka Hiura, Takao Yamauchi, Kaoru Taketa, Koji Yoshida, Masaki Endo: Pressure sensor and method for fabricating the same. Arent Fox Pllc, December 29, 2005: US20050284229-A1

A pressure sensor comprising a plurality of sensor parts arranged in matrix. A first electrode being connected with first wiring and a second electrode being connected with second wiring are disposed oppositely through a cavity part in the sensor part. The second electrode bends to the first electro ...