1
Kanji Otsuka, Kazumichi Mitsusada, Masao Sekibata, Shinji Ohnishi: Semiconductor device including an alpha-particle shield. Hitachi, Antonelli Terry & Wands, September 10, 1985: US04541003 (181 worldwide citation)

The present invention relates to a semiconductor device having a semiconductor element which is sealed by a ceramic package, wherein a shielding member is provided near it from upper surface of the semiconductor element to shield the alpha-particles radiated from the package.


2
Kanji Otsuka, Masao Kato, Takashi Kumagai, Mitsuo Usami, Shigeo Kuroda, Kunizo Sahara, Takeo Yamada, Seiji Miyamoto, Yuuji Shirai, Takayuki Okinaga, Kazutoshi Kubo, Hiroshi Tachi, Masayuki Kawashima: Semiconductor device having leads for mounting to a surface of a printed circuit board. Hitachi, Hitachi VLSI Engineering, Pennie & Edmonds, November 19, 1991: US05067007 (175 worldwide citation)

Attempts have been made to increase the number of pins of packages accompanying the trend toward fabricating integrated circuits highly densely and in smaller sizes. The present invention provides technology for improving reliability in fabricating packages of the surface-mounted type that have incr ...


3
Kunizo Sahara, Kanji Otsuka, Hisashi Ishida: Semiconductor device and process for producing the same. Hitachi, Antonelli Terry & Wands, August 16, 1988: US04764804 (143 worldwide citation)

A semiconductor device having improved heat-dissipating characteristics employs a thin insulator film made of diamond, which has excellent thermal conductivity, as an insulator film which is formed on a chip immediately below a heat-dissipating bump electrode. Since the thin diamond film has excelle ...


4
Kanji Otsuka, Tamotsu Usami, Chihiro Ueda, Yutaka Akiyama, Osamu Koyasu: Transmission cable structure for GHz frequency band signals and connector used for transmission of GHz frequency band signals. Fujikura, Sughrue Mion PLLC, September 26, 2006: US07113002 (142 worldwide citation)

A differential signal transmission cable structure for transmitting differential signals having GHz frequency band in the present invention is provided with a differential signal transmission pair cable 30 connecting a driver circuit 23a and a receiver circuit 23b, for transmitting differential sign ...


5
Kanji Otsuka, Tamotsu Usami: Signal transmission apparatus and interconnection structure. Kanji Otsuka, Tamotsu Usami, Oki Electric, Sanyo Electric, Sharp Kabushiki Kaisha, Sony Corporation, Kabushiki Kaisha Toshiba, NEC Corporation, Fujitsu, Matsushita Electric Industrial, Renesas Technology, Rohm, Volentine & Whitt P L L C, November 4, 2008: US07446567 (117 worldwide citation)

Apparatus for transmitting a digital signal within, for example, an integrated circuit includes a signal transmission line with a directional coupler at one or both ends. The directional coupler blocks the direct-current component of the digital signal while transmitting the alternating-current comp ...


6
Takashi Nakao, Yoshiaki Emoto, Koichiro Sekiguchi, Masayuki Iketani, Kunizo Sahara, Ikuo Yoshida, Akiomi Kohno, Masaya Horino, Hideaki Kamohara, Shouichi Irie, Hiroshi Akasaki, Kanji Otsuka: Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals. Hitachi, Hitachi VLSI Engineering, Fay Sharpe Beall Fagan Minnich & McKee, February 23, 1993: US05188280 (54 worldwide citation)

A technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, more particularly pertains to a method of irradiating bonding surfaces, for which a solder is use ...


7
Hiroshi Akasaki, Kanji Otsuka, Tetsuya Hayashida: Method for forming a silicide layer and barrier layer on a semiconductor device rear surface. Hitachi, Hitachi VLSI Engineering, Pennie & Edmonds, June 8, 1993: US05217922 (54 worldwide citation)

A method of manufacturing a semiconductor device wherein the back surface of a semiconductor chip is adhered closely to a substrate or a seal member through a soldering material or the like, and a metallized layer is formed on the back surface of the chip for attaining good adhesion. The metallized ...


8
Takashi Nakao, Yoshiaki Emoto, Koichiro Sekiguchi, Masayuki Iketani, Kunizo Sahara, Ikuo Yoshida, Akiomi Kohno, Masaya Horino, Hideaki Kamohara, Shouichi Irie, Hiroshi Akasaki, Kanji Otsuka: Method of bonding metals, and method and apparatus for producing semiconductor integrated circuit device using said method of bonding metals. Hitachi, Hitachi VLSI Engineering, Fay Sharpe Beall Fagan Minnich & McKee, February 25, 1992: US05090609 (51 worldwide citation)

An invention relating to a technique for producing a chip mount type package or a TAB package with high reliability, without use of a flux which would cause environmental pollution or would hinder an enhancement of reliability, and more particularly pertaining to a method of irradiating bonding surf ...


9
Toshio Hatada, Shigeo Ohashi, Tadakatsu Nakajima, Heikichi Kuwahara, Hitoshi Matsushima, Motohiro Sato, Hiroshi Inouye, Takao Ohba, Akira Yamagiwa, Kanji Otsuka, Yuuji Shirai: Cooling apparatus of electronic device. Hitachi, Antonelli Terry Stout & Kraus, November 15, 1994: US05365402 (48 worldwide citation)

A cooling apparatus for an electronic device of high calorific density including an elastomer interposed between a semiconductor chip and a heat sink so as to connect them thermally. The elastomer may also be in close contact with a large number of semiconductor chips having various configurations w ...


10
Toshio Hatada, Hitoshi Matsushima, Yoshihiro Kondou, Hiroshi Inoue, Kanji Otsuka, Yuji Shirai, Takao Ohba, Akira Yamagiwa: LSI cooling apparatus and computer cooling apparatus. Hitachi, Antonelli Terry Stout & Kraus, March 23, 1993: US05195576 (44 worldwide citation)

An LSI cooling apparatus having various structures is used in electronic devices such as computer systems. In particular, the LSI cooling of apparatus is suitable for cooling of LSIs having high heat generating densities. In a cooling apparatus of the present invention, a heat sink is constructed to ...