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Kangguo Cheng, Louis C Hsu, Jack A Mandelman, Carl Radens, William Tonti: SOI field effect transistor with a back gate for modulating a floating body. International Business Machines Corporation, Scully Scott Murphy & Presser P C, H Daniel Schnurmann, August 10, 2010: US07772649 (13 worldwide citation)

A masking layer is applied over a top semiconductor layer and patterned to expose in an opening a shallow trench isolation structure and a portion of a top semiconductor region within which a first source/drain region and a body is to be formed. Ions are implanted into a portion of a buried insulato ...


32
Herbert L Ho, Kangguo Cheng, Yoichi Otani, Kevin R Winstel: Deep trench capacitor through SOI substrate and methods of forming. International Business Machines Corporation, Todd M C Li, Hoffman Warnick, August 18, 2009: US07575970 (13 worldwide citation)

Methods of forming a deep trench capacitor through an SOI substrate, and a capacitor are disclosed. In one embodiment, a method includes forming a trench opening into the SOI substrate to the silicon substrate; depositing a sidewall spacer in the trench opening; etching to form the deep trench into ...


33
Roger A Booth Jr, Kangguo Cheng, Toshiharu Furukawa, Chengwen Pei: Integrated circuit with finFETs and MIM fin capacitor. International Business Machines Corporation, David Cain, Roberts Mlotkowski Safran & Cole P C, April 16, 2013: US08420476 (12 worldwide citation)

An integrated circuit having finFETs and a metal-insulator-metal (MIM) fin capacitor and methods of manufacture are disclosed. A method includes forming a first finFET comprising a first dielectric and a first conductor; forming a second finFET comprising a second dielectric and a second conductor; ...


34
Kangguo Cheng, Bruce B Doris, Ying Zhang: Method and structure for forming finFETs with multiple doping regions on a same chip. International Business Machines Corporation, Tutunjian & Bitetto P C, Louis J Percello, September 20, 2011: US08021949 (12 worldwide citation)

A method for fabrication of features for an integrated circuit includes patterning a first semiconductor structure on a surface of a semiconductor device, and epitaxially growing semiconductor material on opposite sides of the first semiconductor structure to form fins. A first angled ion implantati ...


35
Kangguo Cheng, Bruce B Doris, Ali Khakifirooz, Pranita Kulkarni, Ghavam G Shahidi: Stressed Fin-FET devices with low contact resistance. International Business Machines Corporation, George Sai Halasz, Louis J Percello, March 19, 2013: US08399938 (12 worldwide citation)

An FET device includes a plurality of Fin-FET devices. The fins of the Fin-FET devices are composed of a first material. The FET device includes a second material, which is epitaxially merging the fins. The fins are vertically recessed relative to an upper surface of the second material. The FET dev ...


36
Kangguo Cheng: High-k/metal gate MOSFET with reduced parasitic capacitance. International Business Machines Corporation, Scully Scott Murphy & Presser P C, H Daniel Schnurmann, October 12, 2010: US07812411 (12 worldwide citation)

The present invention provides a high-k gate dielectric/metal gate MOSFET that has a reduced parasitic capacitance. The inventive structure includes at least one metal oxide semiconductor field effect transistor (MOSFET) 100 located on a surface of a semiconductor substrate 12. The least one MOSFET ...


37
Kangguo Cheng, Ramachandra Divakaruni: Method for forming buried plate of trench capacitor. International Business Machines Corporation, Steve Capella, November 29, 2005: US06969648 (12 worldwide citation)

A method for forming a buried plate in a trench capacitor is disclosed. The trench is completely filled with a dopant source material such as ASG. The dopant source material is then recessed and the collar material is deposited to form the collar in the upper portion of the trench. After drive-in of ...


38
Roger A Booth Jr, Kangguo Cheng, Chandrasekharan Kothandaraman: Fin anti-fuse with reduced programming voltage. International Business Machines Corporation, Gibb I P Law Firm, October 4, 2011: US08030736 (12 worldwide citation)

A method forms an anti-fuse structure comprises a plurality of parallel conductive fins positioned on a substrate, each of the fins has a first end and a second end. A second electrical conductor is electrically connected to the second end of the fins. An insulator covers the first end of the fins a ...


39
Kangguo Cheng, Balasubramanian S Haran, Shom Ponoth, Theodorus E Standaert, Tenko Yamashita: MOS capacitors with a finfet process. International Business Machines Corporation, Tutunjian & Bitetto P C, Vazken Alexanian, November 12, 2013: US08581320 (12 worldwide citation)

Capacitors include a first electrical terminal that has fins formed from doped semiconductor on a top layer of doped semiconductor on a semiconductor-on-insulator substrate; a second electrical terminal that has an undoped material having bottom surface shape that is complementary to the first elect ...


40
Kangguo Cheng, Bruce B Doris, Ali Khakifirooz, Alexander Reznicek: FinFET structures having silicon germanium and silicon fins. International Business Machines Corporation, Daniel P Morris, Otterstedt Ellenbogen & Kammer, March 31, 2015: US08993399 (12 worldwide citation)

A finned structure is fabricated using a bulk silicon substrate having a carbon doped epitaxial silicon layer. A pFET region of the structure includes silicon germanium fins. Such fins are formed by annealing the structure to mix a germanium containing layer with an adjoining crystalline silicon lay ...



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