1
Reza Arghavani, Michael Chiu Kwan, Li Qun Xia, Kang Sub Yim: Method for producing gate stack sidewall spacers. Applied Materials, Patterson & Sheridan, August 7, 2007: US07253123 (129 worldwide citation)

A method for forming sidewall spacers on a gate stack by depositing one or more layers of silicon containing materials using PECVD process(es) on a gate structure to produce a spacer having an overall k value of about 3.0 to about 5.0. The silicon containing materials may be silicon carbide, oxygen ...


2
Bo Xie, Alexandros T Demos, Kang Sub Yim, Thomas Nowak, Kelvin Chan: UV assisted silylation for recovery and pore sealing of damaged low K films. Applied Materials, Patterson & Sheridan, July 23, 2013: US08492170 (42 worldwide citation)

Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to fo ...


3
Kang Sub Yim, Yi Zheng, Srinivas D Nemani, Li Qun Xia, Eric P Hollar: Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD). Applies Materials, Patterson & Sheridan, June 6, 2006: US07056560 (35 worldwide citation)

A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxi ...


4
Yi Zheng, Srinivas D Nemani, Li Qun Xia, Eric Hollar, Kang Sub Yim: Method for forming ultra low k films using electron beam. Applied Materials, Moser Patterson & Sheridan, June 13, 2006: US07060330 (13 worldwide citation)

The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group ...


5
Kang Sub Yim, Kelvin Chan, Nagarajan Rajagopalan, Josephine Ju Hwei Chang Liu, Sang H Ahn, Yi Zheng, Sang In Yi, Vu Ngoc Tran Nguyen, Alexandros T Demos: Method to reduce gas-phase reactions in a PECVD process with silicon and organic precursors to deposit defect-free initial layers. Applied Materials, Patterson & Sheridan, November 20, 2007: US07297376 (12 worldwide citation)

A method for depositing a low dielectric constant film is provided by positioning a substrate within a processing chamber having a powered electrode, and flowing into the processing chamber an initiation gas mixture of a flow rate of one or more organosilicon compounds and a flow rate of one or more ...


6
Kang Sub Yim, Lihua Li Huang, Francimar Schmitt, Li Qun Xia: Low temperature process to produce low-K dielectrics with low stress by plasma-enhanced chemical vapor deposition (PECVD). Applied Materials, Townsend and Townsend and Crew, September 9, 2008: US07422776 (11 worldwide citation)

Low K dielectric films exhibiting low mechanical stress may be formed utilizing various techniques in accordance with the present invention. In one embodiment, carbon-containing silicon oxide films are formed by plasma-assisted chemical vapor deposition at low temperatures (300° C. or less). In acco ...


7
Son Van Nguyen, Kang Sub Yim: Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication. Applied Materials, Moser Patterson & Sheridan, January 10, 2006: US06984579 (11 worldwide citation)

A method for forming a conductive feature in a low k dielectric layer comprising a layer of nanotubes and a low k material between the nanotubes is provided. The low k dielectric layer may be deposited on a seed layer as a blanket layer that is patterned such that a conductive feature may be formed ...


8
Amir Al Bayati, Alexandros T Demos, Kang Sub Yim, Mehul Naik, Zhenjiang “David” Cui, Mihaela Balseanu, Meiyee, Li Qun Xia: Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay. Applied Materials, Patterson & Sheridan, February 1, 2011: US07879683 (10 worldwide citation)

A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first dielectric layer, filling the tren ...


9
Kang Sub Yim, Melissa M Tam, Dian Sugiarto, Chi I Lang, Peter Wai Man Lee, Li Qun Xia: Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbide. Applied Materials, Moser Patterson & Sheridan, January 4, 2005: US06838393 (9 worldwide citation)

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also prov ...


10
Kang Sub Yim, Melissa M Tam, Dian Sugiarto, Chi I Lang, Peter Wai Man Lee, Li Qun Xia: Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD). Applied Materials, Patterson & Sheridan, June 29, 2010: US07745328 (7 worldwide citation)

Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also prov ...