1
Paul Brunemeier, Ph.D.
Paul E Brunemeier, Archita Sengupta, Justin F Gaynor, Robert H Havemann: Inhomogeneous materials having physical properties decoupled from desired functions. Novellus Systems, Silicon Valley Patent Group, March 29, 2005: US06873026 (16 worldwide citation)

A composition comprises a first component that provides a predetermined response to radiation, and a second component. Upon curing of the composition, portions of the first component bind together portions of the second component to form an inhomogeneous material having physical properties substanti ...


2
Theodore S Moise, Guoqiang Xing, Mark Visokay, Justin F Gaynor, Stephen R Gilbert, Francis Celii, Scott R Summerfelt, Luigi Colombo: Integrated circuit and method. Texas Instruments Incorporated, Carlton H Hoel, W James Brady, Frederick J Telecky Jr, April 3, 2001: US06211035 (171 worldwide citation)

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.


3
Justin F Gaynor: Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits. Novellus Systems, George Wolken Jr, Skjerven Morrill MacPheron, December 11, 2001: US06329062 (53 worldwide citation)

A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions o ...


4
Justin F Gaynor, Judy Huang: Dispersions of silicalite and zeolite nanoparticles in nonpolar solvents. Novellus Systems, Skjerven Morrill, March 18, 2003: US06533855 (43 worldwide citation)

The present invention relates to chemical modifications of the surfaces of silicalite and high-silica zeolite nanoparticles permitting such particles to be dispersed in nonpolar hydrophobic solvents, and to the dispersions so produced and to interlayer dielectric layers, molecular sieve membranes an ...


5
Theodore S Moise, Guoqiang Xing, Mark Visokay, Justin F Gaynor, Stephen R Gilbert, Francis Celii, Scott R Summerfelt, Luigi Colombo: Integrated circuit and method. Texas Instruments Incorporated, Carlton H Hoel, W James Brady, Frederick J Telecky Jr, September 3, 2002: US06444542 (26 worldwide citation)

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.


6
Justin F Gaynor: Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits. Novellus Systems, Parsons Hsue & de Runtz, May 20, 2003: US06566243 (13 worldwide citation)

A two-component porous material including small silicalite crystals in a porous binder provides a low dielectric constant material useful as an insulating layer in microelectronic devices. The silicalite/binder porous material uses silicalite nanocrystals smaller than the characteristic dimensions o ...


7
Bart J van Schravendijk, Justin F Gaynor: Treatment of low k films with a silylating agent for damage repair. Novellus Systems, Weaver Austin Villeneuve & Sampson, June 2, 2009: US07541200 (7 worldwide citation)

The present invention provides methods of repairing damage to low-k dielectric film that is incurred by commonly used processes in IC fabrication. The methods may be integrated into an IC fabrication process flow at various stages. According to various embodiments, the methods of involve performing ...


8
Theodore S Moise, Guoqiang Xing, Mark Visokay, Justin F Gaynor, Stephen R Gilbert, Francis Celii, Scott R Summerfelt, Luigi Colombo: Integrated circuit and method. Texas Instruments Incorporated, Carton H Hoel, W James Brady, Frederick J Telecky Jr, June 7, 2005: US06902939 (7 worldwide citation)

A via etch to contact a capacitor with ferroelectric between electrodes together with dielectric on an insulating diffusion barrier includes two-step etch with F-based dielectric etch and Cl- and F-based barrier etch.


9
Justin F Gaynor, Patrick Vancleemput: Methods for detemplating zeolites and silicalites for use in integrated circuit manufacture. Novellus Systems, Roland Tso, December 9, 2003: US06660245 (7 worldwide citation)

Structure-directing agents, such as quaternary ammonium, are removed from silicalite or zeolite crystals by oxidative attack (e.g., using CO


10
Justin F Gaynor: Method of in-situ treatment of low-k films with a silylating agent after exposure to oxidizing environments. Novellus Systems, Beyer Weaver & Thomas, August 1, 2006: US07083991 (4 worldwide citation)

Method and apparatus for using a silylating agent after exposure to an oxidizing environment for repairing damage to low-k dielectric films are described. Plasma photoresist removal, or ashing, may damage bonds in the low-k materials, which may lead to a significant increase in the dielectric consta ...



Click the thumbnails below to visualize the patent trend.