1
EUNKEE HONG
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 8, 2009: US07585786 (6 worldwide citation)

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


2
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


3
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, September 30, 2008: US07429637

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


4
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Scott C Hatfield, Myers Bigel Sibley & Sajovec PA, August 19, 2004: US20040161944-A1

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


5
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Myers Bigel Sibley & Sajovec, June 16, 2005: US20050130439-A1

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


6
Serah Yun, Changki Hong, Jaedong Lee, Juseon Goo, Youngok Kim, Jeongheon Park, Joonsang Park, Keunhee Bai, Myoungho Jung: Self-aligned contact method. Volentine Francos & Whitt Pllc, July 13, 2006: US20060154460-A1

In one aspect, a self-aligned contact method is provided in which a substrate having a plurality of structures are spaced apart over a surface of the substrate, and a sacrificial film is deposited over and between the plurality of structures, where a material of the sacrificial film has a given with ...


7
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Myers Bigel Sibley & Sajovec, May 4, 2006: US20060094243-A1

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


8
Jongwan Choi, Eunkee Hong, Bo Young Lee, Tae Jong Han, Juseon Goo, Kyungmun Byun: Semiconductor devices with an air gap in trench isolation dielectric. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 16, 2010: US20100230741-A1

A tunnel insulating layer and a charge storage layer are sequentially stacked on a substrate. A recess region penetrates the charge storage layer, the tunnel insulating layer and a portion of the substrate. The recess region is defined by a bottom surface and a side surface extending from the bottom ...



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