1
Jung hyun Lee, Young soo Park, Won tae Lee: Semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, January 16, 2007: US07164147 (129 worldwide citation)

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion in ...


2
Hayong Yun, Geunbae Lim, Jung Hyun Lee, Yukeun Eugene Pak: Cooling device using capillary pumped loop. Samsung Electronics, Burns Doane Swecker & Mathis, September 3, 2002: US06443222 (41 worldwide citation)

A cooling device using a capillary pumped loop (CPL), including a lower board having a looped groove formed on the upper surface, an upper board combined with the upper surface of the lower board to cover the groove, so that the flow path of a working fluid is provided, an evaporator which is provid ...


3
Jung Hyun Lee: Micro cooling device. Bacon & Thomas PLLC, March 2, 2004: US06698502 (35 worldwide citation)

A cooling device having a high cooling efficiency in a miniature size that is neither influenced by gravity nor restricted in its position of installation. The device exchanges, transports and dissipates heat generated by a heat source. The device includes a coolant storing part for storing liquid c ...


4
Jung Hyun Lee, Yoon Ho Khang: Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device. Samsung Electronics, Harness Dickey & Pierce, May 13, 2008: US07371429 (33 worldwide citation)

A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te ...


5
Yo sep Min, Eun ju Bae, Won bong Choi, Young jin Cho, Jung hyun Lee: Method of manufacturing inorganic nanotube. Samsung Electronics, Lee & Morse P C, February 28, 2006: US07005391 (24 worldwide citation)

A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and r ...


6
Yo sep Min, Young jin Cho, Jung hyun Lee: Chemical vapor deposition method using alcohol for forming metal oxide thin film. Samsung Electronics, Buchanan Ingersoll & Rooney PC, November 14, 2006: US07135207 (22 worldwide citation)

Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic c ...


7
Jung Hyun Lee, Yoon Ho Khang: Precursor, thin layer prepared including the precursor, method of preparing the thin layer and phase-change memory device. Samsung Electronics, Harness Dickey & Pierce, June 1, 2010: US07728172 (21 worldwide citation)

A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te ...


8
Yeon hee Kim, Jung hyun Lee, Yong young Park, Chang soo Lee: Thin film etching method. Samsung Electronic, Harness Dickey & Pierce, May 3, 2011: US07935641 (19 worldwide citation)

Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching ...


9
Jung Hyun Lee, Yoon Shik Hong, Hyun Kee Lee, Sung Cheon Jung: Variable optical attenuator. Samsung Electro-Mechanics, Darby & Darby, October 1, 2002: US06459845 (16 worldwide citation)

A variable optical attenuator to provide a new drive mechanism for an actuator, whereby the amount of attenuation does not increase in geometric progression as voltage increases, and an exceptional resolution effect is achieved. The variable optical attenuator comprises a transmission fiber for tran ...


10
Jung hyun Lee, Dae sig Kim, Yo sep Min, Young jin Cho: Atomic layer deposition using organometallic complex with &bgr;-diketone ligand. Samsung Electronics, Lee & Sterba P C, June 22, 2004: US06752869 (14 worldwide citation)

An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and ...



Click the thumbnails below to visualize the patent trend.