1
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device having an SOI structure and manufacturing method therefor. Semiconductor Energy Laboratory, Fish & Richardson P C, October 3, 2000: US06127702 (437 worldwide citation)

A fine semiconductor device having a short channel length while suppressing a short channel effect. Linearly patterned or dot-patterned impurity regions 104 are formed in a channel forming region 103 so as to be generally parallel with the channel direction. The impurity regions 104 are effective in ...


2
Shunpei Yamazaki, Jun Koyama, Kunitaka Yamamoto, Toshimitsu Konuma: Electro-optical device and electronic device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, February 10, 2004: US06689492 (208 worldwide citation)

An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film


3
Hisashi Ohtani, Jun Koyama, Shunpei Yamazaki: Electro-optical device and semiconductor circuit. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, October 16, 2001: US06303963 (204 worldwide citation)

A high performance circuit is formed by using a TFT with less fluctuation in characteristics, and a semiconductor device including such a circuit is formed. When the TFT is formed, first, a base film and a semiconductor film are continuously formed on a quartz substrate without exposing to the air. ...


4
Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Takeshi Fukunaga: Semiconductor device and method of manufacturing the same. Semiconductor Energy Laboratory, Fish & Richardson P C, April 2, 2002: US06365933 (197 worldwide citation)

A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere conta ...


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Jun Koyama: Display device and method of driving the same. Semiconductor Energy Laboratory, Fish & Richardson P C, December 7, 2004: US06828950 (188 worldwide citation)

A display is conducted by using a time gray-scale system, in which one frame period is divided into a plurality of sub-frame periods, and a voltage applied to an EL element of a pixel is varied on a sub-frame period basis. Because of this, a display device is provided in which the fluctuations in br ...


7
Shunpei Yamazaki, Jun Koyama, Hidehito Kitakado: Process of fabricating a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, October 23, 2001: US06306694 (186 worldwide citation)

A semiconductor device having high operating performance and reliability is disclosed, and its fabrication process is also disclosed.


8
Jun Koyama, Yuji Kawasaki: Semiconductor integrated circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, March 30, 1999: US05889291 (176 worldwide citation)

In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel ...


9
Hajime Kimura, Jun Koyama, Shunpei Yamazaki: Touch panel, display device provided with touch panel and electronic equipment provided with display device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office, December 6, 2005: US06972753 (176 worldwide citation)

A touch panel using an optical sensor has a simple construction and can accurately detect an input position. An illuminating lights emitted from illuminating means are turned into lights having a high directivity in an X-axis direction and in a Y-axis direction of the prism lens sheet and thereafter ...


10
Shunpei Yamazaki, Jun Koyama: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office, October 22, 2002: US06469317 (160 worldwide citation)

The purpose of the present invention is to provide a reliable semiconductor device comprising TFTs having a large area integrated circuit with low wiring resistance. One of the features of the present invention is that an LDD region including a region which overlaps with a gate electrode and a regio ...