1
Rajesh Kumar, Tsuyoshi Yamamoto, Shoichi Onda, Mitsuhiro Kataoka, Kunihiko Hara, Eiichi Okuno, Jun Kojima: Silicon carbide semiconductor device. Denso Corporation, Harness Dickey & Pierce, June 3, 2003: US06573534 (125 worldwide citation)

A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second condu ...


2
Eiichi Okuno, Jun Kojima: Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities. Denso Corporation, Pillsbury Winthrop, April 24, 2001: US06221700 (57 worldwide citation)

A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while dis ...


3
Rajesh Kumar, Hiroki Nakamura, Jun Kojima: Silicon carbide semiconductor device and method of fabricating the same. Denso Corporation, Posz & Bethards, April 22, 2003: US06551865 (51 worldwide citation)

Openings are formed in a laminate of a polycrystalline silicon film and an LTO film on a channel layer. While the laminate is used as a mask, impurities are implanted into a place in the channel layer which is assigned to a source region. Also, impurities are implanted into another place in the chan ...


4
Jun Kojima, Takeshi Endo, Eiichi Okuno, Yoshihito Mitsuoka, Yoshiyuki Hisada, Hideo Matsuki: Silicon carbide semiconductor device and method for manufacturing the same. DENSO CORPORATION, Posz Law Group, April 29, 2008: US07365363 (31 worldwide citation)

A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on b ...


5
Quang Viet Nguyen, Jun Kojima: Temporal laser pulse manipulation using multiple optical ring-cavities. The United States of America represented by the Administrator of the National Aeronautics and Space Administration, Robert H Earp III, October 12, 2010: US07813406 (15 worldwide citation)

An optical pulse stretcher and a mathematical algorithm for the detailed calculation of its design and performance is disclosed. The optical pulse stretcher has a plurality of optical cavities, having multiple optical reflectors such that an optical path length in each of the optical cavities is dif ...


6
Jun Kojima, Mitsuru Seta, Tomoyuki Ueno: Receiving apparatus and method of outputting received signal in multimedia communication. Fujitsu, Armstrong Westerman Hattori McLeland & Naughton, March 23, 1999: US05886999 (13 worldwide citation)

A demultiplexer separates the data obtained by the demodulation into the data for each information medium, and a synchronous word detection state monitor detects the synchronous word contained in a received signal of a predetermined information medium and compares the state in which said synchronous ...


7
Mitsumasa Fukuda, Yukio Sakamoto, Jun Kojima: Head. Murata Manufacturing, Keating & Bennett, December 2, 2003: US06657827 (6 worldwide citation)

A head includes a head chip, having first and second external connection electrodes, for reading a signal from a storage medium and writing a signal on the storage medium, a substrate having the head chip mounted thereon, a hot-side conductor path and a ground-side conductor path each formed on the ...


8
Quang Viet Nguyen, David G Fischer, Jun Kojima: Interference-free optical detection for Raman spectroscopy. The United States of America Represented by the Administrator of National Aeronautics and Space Administration, Robert H Earp III, November 13, 2012: US08310671 (3 worldwide citation)

An architecture for spontaneous Raman scattering (SRS) that utilizes a frame-transfer charge-coupled device (CCD) sensor operating in a subframe burst gating mode to realize time-resolved combustion diagnostics is disclosed. The technique permits all-electronic optical gating with microsecond shutte ...


9
Jun Kojima: Clock signal generating device and electronic device. Casio Electronics Manufacturing, Casio Computer, Holtz Holtz Goodman & Chick PC, December 17, 2013: US08612794 (2 worldwide citation)

To provide a clock signal generating device that changes the frequency of a predetermined clock signal in a short time and prevents or mitigates instability in the operation of the supply destinations of the clock signal when the frequency of the clock signal is changing. The clock signal generating ...


10
Yasuo Kitou, Jun Kojima: Device for manufacturing sic single crystal and method for the same. DENSO CORPORATION, Posz Law Group, November 26, 2013: US08591654 (2 worldwide citation)

A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surfac ...



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