1
Toru Teshima, Jun ichi Nishizawa, Yasunori Kishi: Colored-light emitting display. Stanley Electric, Cushman Darby & Cushman, June 2, 1981: US04271408 (376 worldwide citation)

A plurality of cellular concave mirror surfaces are formed on a plate-like reflector unit, and a plurality of light-emitting diodes are disposed on these cellular concave mirror surfaces to jointly form a colored light source. Connection wirings to be connected with a power supply source are provide ...


2
Jun ichi Nishizawa, Yasuo Okuno, Keishiro Takahashi: Light-responsive light-emitting diode display. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, May 11, 1982: US04329625 (265 worldwide citation)

A light-responsive light-emitting diode display comprises a light-emitting diode circuit including a series connection of light-emitting diodes and a light-responsive current-controlling circuit connected in series to said light-emitting diode circuit for supplying a current thereto in correspondenc ...


3
Jun ichi Nishizawa, Masahiro Konishi: Solid-state image sensor with exposure controller. Fuji Photo Film, McGlew and Tuttle, September 11, 1984: US04471228 (209 worldwide citation)

A solid-state image sensor which detects the quantity of light incident on image sensor cells during exposure and performs exposure control in accordance with an exposure value thus obtained. The solid-state image sensor is provided with a photoelectric converter having a plurality of non-destructiv ...


4
Jun ichi Nishizawa, Tadahiro Ohmi: Short channel MOSFET with buried anti-punch through region. Zaidan Hojin Handotai Kenkyu Shinkokai, Cushman Darby & Cushman, January 24, 1995: US05384476 (104 worldwide citation)

A semiconductor device having a source region, a drain region and a channel region which are formed in a surface portion of a semiconductor substrate, and a gate formed with a material having a relatively high built-in voltage relative to the source region. This semiconductor device may further incl ...


5
Jun ichi Nishizawa, Hisao Kondoh: Double gate static induction thyristor. Mitsubishi Electric Corporation, Kerkam Stowell Kondracki & Clarke, June 25, 1991: US05027180 (88 worldwide citation)

A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed at a second p ...


6
Jun ichi Nishizawa, Tadahiro Ohmi: Semiconductor fabricating apparatus. Handotai Kenkyu Shinkokai, Sughrue Mion Zinn Macpeak and Seas, December 17, 1985: US04558660 (75 worldwide citation)

A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an in ...


7
Jun ichi Nishizawa, Toru Kurabayashi: Method of epitaxially growing compound crystal and doping method therein. Research Development Corporation of Japan, Nixon & Vanderhye, August 16, 1994: US05338389 (59 worldwide citation)

In a method of epitaxially growing a compound crystal, a plurality of crystal component gasses of a compound and reaction gas chemically reacting with the crystal component gasses are individually directed, in the predetermined order, onto a substrate crystal heated under vacuum. The crystal compoun ...


8
Jun ichi Nishizawa, Toru Kurabayashi: Method of epitaxially growing semiconductor crystal using light as a detector. Research Development Corporation of Japan, Jun ichi Nishizawa, Zaidan Hojin, Handotai Kenkyu Shinkoka, Fish & Richardson, October 19, 1993: US05254207 (59 worldwide citation)

Material and impurity gases are introduced into a crystal growth chamber to grow a crystal film on a GaAs substrate. A light beam emitted from a variable-wavelength light source is applied to the crystal film being grown on the substrate while varying the wavelength of the light beam. The dependency ...


9
Jun ichi Nishizawa, Toru Kurabayashi: Method of manufacturing a static induction field-effect transistor. Research Development Corp of Japan, Jun ichi Nishizawa, Zaidan Hojin Handotai Kenkyu Shinkokai, Fish & Richardson, March 22, 1994: US05296403 (58 worldwide citation)

A semiconductor device comprises a vertical MIS-SIT which has a smaller source-to-drain distance for operation at ultra-high speed. The semiconductor device has a substrate crystal for epitaxial growth thereon, least two semiconductor regions of different conductivity types deposited by way of epita ...


10
Jun ichi Nishizawa, Toru Kurabayashi: Semiconductor device comprising a highspeed static induction transistor. Research Development Corp of Japan, Jun ichi Nishzawa, Zaidan Hojin Handotai Kenkyu Shinokai, Fish & Richardson, July 2, 1996: US05532511 (54 worldwide citation)

A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the s ...



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