1
Bin Yu, Judy Xilin An, Cyrus E Tabery, Haihong Wang: Method for forming multiple structures in a semiconductor device. Advanced Micro Devices, Harrity & Snyder, March 16, 2004: US06706571 (477 worldwide citation)

A method of forming multiple structures in a semiconductor device includes depositing a film over a conductive layer, etching a trench in a portion of the film and forming adjacent the sidewalls of the trench. The film may then be etched, followed by an of the conductive layer to form the structures ...


2
Zoran Krivokapic, Judy Xilin An, Srikanteswara Dakshina Murthy, Haihong Wang, Bin Yu: Narrow fin FinFET. Advanced Micro Devices, Harrity & Snyder, July 26, 2005: US06921963 (212 worldwide citation)

A narrow channel FinFET is described herein with a narrow channel width. A protective layer may be formed over the narrow channel, the protective layer being wider than the narrow channel.


3
Matthew S Buynoski, Judy Xilin An, Haihong Wang, Bin Yu: Double spacer FinFET formation. Advanced Micro Devices, Harrity & Snyder, March 23, 2004: US06709982 (149 worldwide citation)

A method for forming a group of structures in a semiconductor device includes forming a conductive layer on a substrate, where the conductive layer includes a conductive material, and forming an oxide layer over the conductive layer. The method further includes etching at least one opening in the ox ...


4
Bin Yu, William G En, Judy Xilin An, Concetta E Riccobene: Method of fabrication of semiconductor-on-insulator (SOI) wafer having a Si/SiGe/Si active layer. Advanced Micro Devices, Renner Otto Boisselle & Sklar, June 25, 2002: US06410371 (94 worldwide citation)

A method of forming a semiconductor-on-insulator (SOI) wafer. The method includes the steps of providing a first wafer, the first wafer having a silicon substrate and an oxide layer disposed thereon; providing a second wafer, the second wafer having a silicon substrate, the substrate of the second w ...


5
Judy Xilin An, Bin Yu: Asymmetrical double gate or all-around gate MOSFET devices and methods for making same. Advance Micro Devices, Harrity & Snyder, October 5, 2004: US06800885 (92 worldwide citation)

An asymmetric double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a first fin formed on a substrate; a second fin formed on the substrate; a first gate formed adjacent first sides of the first and second fins, the first gate being doped with a first type of impurity; and ...


6
Srikanteswara Dakshina Murthy, Judy Xilin An, Zoran Krivokapic, Haihong Wang, Bin Yu: Strained channel finfet. Advanced Micro Devices, Harrity & Snyder, October 12, 2004: US06803631 (90 worldwide citation)

A semiconductor structure includes a fin and a layer formed on the fin. The fin includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer is formed on the surfaces and includes a second crystalline material. The first crystalline material has a diff ...


7
Bin Yu, Judy Xilin An, Cyrus E Tabery: Method for forming multiple fins in a semiconductor device. Advanced Micro Devices, Harrity & Snyder, March 29, 2005: US06872647 (83 worldwide citation)

A method of forming multiple fins in a semiconductor device includes forming a structure having an upper surface and side surfaces on the semiconductor device. The semiconductor device includes a conductive layer located below the structure. The method also includes forming spacers adjacent the stru ...


8
Bin Yu, Shibly S Ahmed, Judy Xilin An, Srikanteswara Dakshina Murthy, Zoran Krivokapic, Haihong Wang: Semiconductor device having a U-shaped gate structure. Advanced Micro Devices, Harrity & Snyder, December 21, 2004: US06833588 (80 worldwide citation)

A double-gate semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the gate is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The bottom surface and at least a ...


9
Haihong Wang, Judy Xilin An, Bin Yu: Uniformly doped source/drain junction in a double-gate MOSFET. Advanced Micro Devices, Harrity & Snyder, April 6, 2004: US06716690 (80 worldwide citation)

Multiple dopant implantations are performed on a FinFET device to thereby distribute the dopant in a substantially uniform manner along a vertical depth of the FinFET in the source/drain junction. Each of the multiple implantations may be performed at different tilt angles.


10
Srikanteswara Dakshina Murthy, Judy Xilin An, Zoran Krivokapic, Haihong Wang, Bin Yu: Strained channel FinFET. Advanced Micro Devices, Harrity & Snyder, May 24, 2005: US06897527 (73 worldwide citation)

A semiconductor device includes a fin and a layer formed on at least a portion of the fin. The fin includes a first crystalline material. The layer includes a second crystalline material, where the first crystalline material has a larger lattice constant than the second crystalline material to induc ...



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