1
Joseph H Johnson: Disposable, pre-gel body electrodes. Seed Berry Vernon & Baynham, January 10, 1978: US04067322 (158 worldwide citation)

A disposable, pre-gel body electrode for short term use has a self-contained electrolyte gel-impregnated pad therein sealed with a cap which minimizes electrolyte dry-out.


2
Pablo D&apos Anna, Joseph H Johnson: Microwave field effect transistor structure. Sirenza Microdevices, Boris G Tankhilevich, December 14, 2004: US06831332 (37 worldwide citation)

A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first ...


3
Pablo D&apos Anna, Joseph H Johnson: Microwave field effect transistor structure on silicon carbide substrate. Sirenza Microdevices, Boris G Tankhilevich, February 18, 2003: US06521923 (31 worldwide citation)

A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surf ...


4
Herbert P Richter, Joseph H Johnson: Chemiluminescent system catalysts. The United States of America represented by the Secretary of the Navy, W Thom Skeer, December 2, 1986: US04626383 (23 worldwide citation)

Catalysts for low temperature hydrogen peroxide/oxalate ester fluorescer miluminescent systems are disclosed. Lithium carboxylic said salt catalysts which lower the activation energy of the reaction and also reduce the temperature dependence of the light emission process are preferred.


5
Joseph H Johnson: R.F. transistor package having an isolated common lead. Varian Associates, Stanley Z Cole, D R Pressman, Robert K Stoddard, May 18, 1976: US03958195 (22 worldwide citation)

In a radio frequency transistor package, a layer of metallization is deposited on an electrically insulative thermally conductive ceramic substrate member serving as a heat sink. An insular region of the metallization serves as a pad for receiving a transistor die with the collector region of the tr ...


6
Joseph H Johnson, Lee B Max: Temperature compensating transistor bias device. Varian Associates, Stanley Z Cole, Harry E Aine, Edward H Berkowitz, December 30, 1980: US04242598 (20 worldwide citation)

The base-to-emitter bias voltage and current of a high frequency transistor, operating class AB or class A, is derived from a semiconductive bias device consisting of a semiconductive diode junction fed with current from a constant current source to derive a V.sub.BE voltage thereacross which is the ...


7
Gregory D Boggess, Joseph H Johnson, Richard M Kight, John D Mason, Roger D Luke: Modular poultry automatic vaccine injection and spray apparatus. May 17, 1994: US05312353 (12 worldwide citation)

A modular poultry automatic injection and spraying apparatus (10) featuring a dual-sensor switch means (41) and a dual-action, fluid-actuated drive means (101) is disclosed. The apparatus has a casing construction (11) including an upper housing (12) mounted on a lower housing (13) such that the low ...


8
Pablo D Anna, Joseph H Johnson: Microwave transistor structure having step drain region. Sirenza Microdevices, Boris G Tankhilevich, January 4, 2005: US06838731 (8 worldwide citation)

A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface o ...


9
Herbert P Richter, Ronald A Henry, Joseph H Johnson: Chemiluminescent systems. W Thom Skeer, April 7, 1987: US04655969 (7 worldwide citation)

Chemiluminescent mixtures utilize mono and di-alkyl substituted 9,10-bis(phenylethynyl)anthracene derivatives to provide higher chemiluminescence efficiencies. The preferred fluorescers are 2-ethyl-9,10-bis(phenylethynyl)anthracene and 1,4-dimethyl-9,10-bis(phenylethynyl)anthracene.


10
Joseph H Johnson, Pablo D Anna: High performance active and passive structures based on silicon material bonded to silicon carbide. RF Micro Devices, Withrow & Terranova P L L C, December 20, 2011: US08080826 (4 worldwide citation)

The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: (1) a Silicon Carbide substrate, (2) a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon ...