1
Scott N Lockhart, Samuel E Hohulin, Joseph F Brooks deceased: Suction cleaner. National Union Electric Corporation, Merriam Marshall & Bicknell, March 15, 1983: US04376322 (48 worldwide citation)

A suction cleaner capable of rapid conversion for either on-the-floor or above-the-floor cleaning, is disclosed. The cleaner includes an elongated housing arranged in a generally upright manner and having an elongated, upwardly extending handle at the rear side thereof. A floor nozzle is connected t ...


2
John T Moore, Joseph F Brooks: Method of fabricating an electrode structure for use in an integrated circuit. Micron Technology Ing, Dickstein Shapiro, February 19, 2008: US07332401 (25 worldwide citation)

An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the dielectric layer and on the exposed ...


3
Terry L Gilton, Steve W Bowes, John T Moore, Joseph F Brooks, Kristy A Campbell: Semiconductor processing method using photoresist and an antireflective coating. Micron Technology, Wells St John P S, March 1, 2005: US06861367 (23 worldwide citation)

A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating ...


4
Joseph F Brooks: Connection for securing a helically convoluted hose to a hose fitting. National Union Electric Corporation, Merriam Marshall & Bicknell, November 20, 1979: US04174858 (20 worldwide citation)

A connection for securing one end of a helically convoluted suction hose to a hose fitting such as is used to effect rapid engagement of the hose with or disengagement thereof from the suction inlet of a vacuum cleaner. The fitting includes a tubular portion having external threads of the same pitch ...


5
Kristy A Campbell, Terry L Gilton, John T Moore, Joseph F Brooks: Chalcogenide glass constant current device, and its method of fabrication and operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, November 2, 2004: US06813178 (18 worldwide citation)

The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also pro ...


6
Jon Daley, Kristy A Campbell, Joseph F Brooks: Access transistor for memory device. Micron Technology, Dickstein Shapiro, May 4, 2010: US07709885 (15 worldwide citation)

An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance var ...


7
Kristy A Campbell, John Moore, Terry L Gilton, Joseph F Brooks: Method to alter chalcogenide glass for improved switching characteristics. Micron Technology, Dickstein Shapiro Morin & Oshinsky, March 15, 2005: US06867064 (14 worldwide citation)

The present invention is related to methods of fabricating a resistance variable memory element and a device formed therefrom having improved switching characteristics. According to an embodiment of the present invention a resistance variable material memory element is annealed to remove stoichiomet ...


8
John Moore, Kristy A Campbell, Joseph F Brooks: Structure for amorphous carbon based non-volatile memory. Micron Technology, Dickstein Shapiro, March 18, 2008: US07344946 (14 worldwide citation)

A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at lea ...


9
John T Moore, Joseph F Brooks: Method of forming electrode structure for use in an integrated circuit. Micron Technology, Dickstein Shapiro, October 3, 2006: US07115504 (13 worldwide citation)

An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the dielectric layer and on the exposed ...


10
John T Moore, Joseph F Brooks: Electrode structure for use in an integrated circuit. Micron Technology, Dickstein Shapiro Morin & Oshinsky, November 9, 2004: US06815818 (13 worldwide citation)

An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the dielectric layer and on the exposed ...



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