1
Scott N Lockhart, Samuel E Hohulin, Joseph F Brooks deceased: Suction cleaner. National Union Electric Corporation, Merriam Marshall & Bicknell, March 15, 1983: US04376322 (48 worldwide citation)

A suction cleaner capable of rapid conversion for either on-the-floor or above-the-floor cleaning, is disclosed. The cleaner includes an elongated housing arranged in a generally upright manner and having an elongated, upwardly extending handle at the rear side thereof. A floor nozzle is connected t ...


2
John T Moore, Joseph F Brooks: Method of fabricating an electrode structure for use in an integrated circuit. Micron Technology Ing, Dickstein Shapiro, February 19, 2008: US07332401 (29 worldwide citation)

An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the dielectric layer and on the exposed ...


3
Terry L Gilton, Steve W Bowes, John T Moore, Joseph F Brooks, Kristy A Campbell: Semiconductor processing method using photoresist and an antireflective coating. Micron Technology, Wells St John P S, March 1, 2005: US06861367 (23 worldwide citation)

A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating ...


4
Joseph F Brooks: Connection for securing a helically convoluted hose to a hose fitting. National Union Electric Corporation, Merriam Marshall & Bicknell, November 20, 1979: US04174858 (20 worldwide citation)

A connection for securing one end of a helically convoluted suction hose to a hose fitting such as is used to effect rapid engagement of the hose with or disengagement thereof from the suction inlet of a vacuum cleaner. The fitting includes a tubular portion having external threads of the same pitch ...


5
Kristy A Campbell, Terry L Gilton, John T Moore, Joseph F Brooks: Chalcogenide glass constant current device, and its method of fabrication and operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, November 2, 2004: US06813178 (18 worldwide citation)

The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also pro ...


6
Jon Daley, Kristy A Campbell, Joseph F Brooks: Access transistor for memory device. Micron Technology, Dickstein Shapiro, May 4, 2010: US07709885 (15 worldwide citation)

An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance var ...


7
John T Moore, Joseph F Brooks: Method of forming electrode structure for use in an integrated circuit. Micron Technology, Dickstein Shapiro, October 3, 2006: US07115504 (14 worldwide citation)

An electrode structure includes a first layer of conductive material and a dielectric layer formed on a surface of the first layer. An opening is formed in the dielectric layer to expose a portion of the surface of the first layer. A binding layer is formed on the dielectric layer and on the exposed ...


8
Kristy A Campbell, John Moore, Terry L Gilton, Joseph F Brooks: Method to alter chalcogenide glass for improved switching characteristics. Micron Technology, Dickstein Shapiro Morin & Oshinsky, March 15, 2005: US06867064 (14 worldwide citation)

The present invention is related to methods of fabricating a resistance variable memory element and a device formed therefrom having improved switching characteristics. According to an embodiment of the present invention a resistance variable material memory element is annealed to remove stoichiomet ...


9
John Moore, Kristy A Campbell, Joseph F Brooks: Structure for amorphous carbon based non-volatile memory. Micron Technology, Dickstein Shapiro, March 18, 2008: US07344946 (14 worldwide citation)

A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at lea ...


10
John Moore, Kristy A Campbell, Joseph F Brooks: Structure for amorphous carbon based non-volatile memory. Micron Technology, Dickstein Shapiro, November 17, 2009: US07619247 (13 worldwide citation)

A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at lea ...



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