1
Jong Chul Lee: Hydroponic device for plant cultivation. Harvey Kaye, Jerry Cohen, August 15, 1995: US05440836 (25 worldwide citation)

A hydroponic device comprises a reservoir for containing culture fluid therein, one or more cultivation beds placed on the reservoir one above the other, a conduit extending vertically upwardly from the reservoir up to an uppermost cultivation bed and a fluid pump mounted on the reservoir for forced ...


2
Jong Chul Lee: Gel-form lipstick. Foley & Lardner, August 2, 2005: US06923587 (14 worldwide citation)

Disclosed herein is a gel-form lipstick dispenser which may discharge gel-form lipstick materials with very high viscosity safely.


3
Eun Tae Park, Jeong Joo Kim, Hee Young Lee, Eun Sub Lim, Jong Chul Lee, Yul Kyo Chung: High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same. Samsung Electro-Mechanics, McDermott Will & Emery, October 27, 2009: US07609504 (3 worldwide citation)

The invention relates to a high-dielectric constant metal/ceramic/polymer composite material and a method for producing an embedded capacitor. As ceramic particles having a relatively small size are bound to the surface of metal particles having a relatively large size by mixing, the occurrence of p ...


4
Jong Chul Lee: Women's elastic free size winter shirts. December 31, 2002: US06499142 (1 worldwide citation)

A woman's shirts having an omasum-inner-wall like textile structure, defined as a bulbous unit above a planar base, to render desired elasticity to a shirt. The shirt of this invention is excellent in resilient elasticity, original shape retainability and shape stability. The shirts of this inv ...


5
Jong Chul Lee, Sang Hyuck Park: Apparatus for treating thin film and method of treating thin film. LG DISPLAY, Brinks Gilson & Lione, December 1, 2015: US09200369

An apparatus and method for treating a thin film on a substrate is presented. The substrate is loaded on a fixed stage adapted to receive the substrate. An energy source is aligned through a space in a gas shield so as to face a thin film on the substrate to be repaired after the substrate is loaded ...


6
Kyoo Ho Jung, Byung Jick Cho, Jong Chul Lee, Won Ki Ju: Electronic device with variable resistive patterns. SK HYNIX, August 16, 2016: US09418008

An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction intersecting the first direction, and a plurality of variable resistance patterns t ...


7
Jong Chul Lee, Je Sup Lee, Sang Hyuck Park: Apparatus for treating thin film and method of treating thin film. LG Display, Brinks Hofer Gilson & Lione, November 16, 2010: US07833350

An apparatus for treating a substrate includes a stage adapted to receive the substrate; a gas shield facing the substrate and having a retention space, the gas shield including: a top plate; a bottom plate facing the substrate and having pump holes around the retention space; and a middle plate bet ...


8
Eun Kyoung Kim, Myoung Won Yoon, Jong Chul Lee, Oh Suk Kwong, Won Chul Lee: Method of storing data in nonvolatile memory device and method of testing nonvolatile memory device. Samsung Electronics, Volentine & Whitt PLLC, November 10, 2015: US09183946

A method of storing data in a nonvolatile memory device comprises performing a program operation on target memory cells among multiple memory cells, performing a first verify operation to determine whether the target memory cells are in a program pass state or a program fail state, and as a conseque ...


9
Jong Chul Lee, Eui Hwan Son: Gasket and the manufacturing method thereof. KUK IL INNTOT, Cantor Colburn, October 11, 2016: US09464718

A gasket includes: a spiral wound gasket; a first O-ring member located inner side of the spiral wound gasket; a second O-ring member located outer side of the spiral wound gasket; a first core spring located inside the first O-ring member; a second core spring located inside the second O-ring membe ...


10
Seung Beom Baek, Bo Min Park, Young Ho Lee, Jong Chul Lee: Method for fabricating semiconductor device. SK Hynix, IP & T Group, December 30, 2014: US08921208

A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial ...



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