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Scott Thomas Sheppard, Scott Thomas Allen, John Williams Palmour: Nitride based transistors on semi-insulating silicon carbide substrates. Cree, Summa & Allan P A, November 13, 2001: US06316793 (267 worldwide citation)

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, ...


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Scott Thomas Sheppard, Scott Thomas Allen, John Williams Palmour: Nitride based transistors on semi-insulating silicon carbide substrates. Cree, Summa & Allan P A, June 24, 2003: US06583454 (103 worldwide citation)

A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, ...


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Dale Marius Brown, Richard Joseph Saia, John Adam Edmond, John Williams Palmour: Silicon carbide MOSFET having self-aligned gate structure. General Electric Company, Marvin Snyder, March 10, 1998: US05726463 (87 worldwide citation)

A SiC MOSFET having a self-aligned gate structure is fabricated upon a monocrystalline substrate layer, such as a p type conductivity .alpha.6H silicon carbide (SiC) substrate. An SiC n+ type conductivity layer, epitaxially grown on the substrate layer, includes a steep-walled groove etched through ...


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Lori A Lipkin, John Williams Palmour: Layered dielectric on silicon carbide semiconductor structures. Cree, Philip Summa P A, June 12, 2001: US06246076 (82 worldwide citation)

A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on the silicon dioxide layer, with the insulating ...


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Richard Peter Smith, Scott T Sheppard, John Williams Palmour: Dielectric passivation for semiconductor devices. Cree, Summa Allan & Additon P A, February 19, 2008: US07332795 (74 worldwide citation)

A semiconductor device is disclosed that includes a layer of Group III nitride semiconductor material that includes at least one surface, a control contact on the surface for controlling the electrical response of the semiconductor material, a dielectric barrier layer covering at least a portion of ...


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Conrad P Dorn, Paul E Finke, Jeffrey J Hale, Malcolm MacCoss, Sander G Mills, Shrenik K Shah, Mark Stuart Chambers, Timothy Harrison, Tamara Ladduwahetty, Brian John Williams: Morpholine and thiomorpholine tachykinin receptor antagonists. Merck & Co, J Eric Thies, David L Rose, February 17, 1998: US05719147 (66 worldwide citation)

Substituted heterocycles of the general structural formula: ##STR1## are tachykinin receptor antagonists useful in the treatment of inflammatory diseases, pain or migraine, asthma and emesis, and calcium channel blockers useful in the treatment of cardiovascular conditions such as angina, hypertensi ...


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Michael John Williams, Paul Kimelman, Jon Andrew Rijk: Breakpoint logic unit, debug logic and breakpoint method for a data processing apparatus. ARM, Nixon & Vanderhye P C, February 19, 2008: US07334161 (56 worldwide citation)

The present invention provides a breakpoint logic unit, debug logic and breakpoint method for a data processing apparatus. The breakpoint logic unit comprises a value storage operable to store data indicative of a selected value for an operational characteristic of the data processing apparatus, and ...


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John Williams: Surfacing composition containing aqueous resin emulsion and calcium sulfate hemihydrate plaster. Stewart and Kolasch, March 30, 1976: US03947398 (52 worldwide citation)

The invention provides a fluid plaster composition having desirable flow properties and being capable of setting to a hard material, said composition comprising a calcium sulphate alpha-hemihydrate plaster and an aqueous resin emulsion capable of forming a hard material on removal of water, the rela ...