1
Dah Wen Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: Self-aligned power MOSFET device with recessed gate and source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, September 1, 1998: US05801417 (133 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


2
Dah W Tsang, John W Mosier II, Douglas A Pike Jr, Theodore O Meyer: High density power device fabrication process. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, February 1, 1994: US05283201 (116 worldwide citation)

A recessed gate power MOSFET is formed on a substrate (20) including a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. A trenching protective layer (30) formed on the substrate upper surface (28) is patterned to define exposed areas (46) as stripes or a matrix, and protect ...


3
Dah Wen Tsang, Dumitru Sdrulla, Douglas A Pike Jr, Theodore O Meyer, John W Mosier II deceased: High density power device fabrication process using undercut oxide sidewalls. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, July 15, 1997: US05648283 (84 worldwide citation)

A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the si ...


4
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Method of making topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, May 28, 1991: US05019522 (54 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


5
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger: Iopographic pattern delineated power mosfet with profile tailored recessed source. Advanced Power Technology, Marger & Johnson, January 23, 1990: US04895810 (52 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...


6
Theodore O Meyer, John W Mosier II, Douglas A Pike Jr, Theodore G Hollinger, Dah W Tsang: Topographic pattern delineated power MOSFET with profile tailored recessed source. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, September 3, 1991: US05045903 (46 worldwide citation)

A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative junctions within a silicon substrate and the ...