1
Mark I Gardner, John L Nistler, Charles E May: Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices. Advanced Micro Devices, Kevin L Daffer, Conley Rose & Tayon, April 3, 2001: US06210999 (104 worldwide citation)

A self-aligned semiconductor device including a high-K dielectric which is not exposed to elevated processing temperatures and a method for producing this device are provided. The method may also be used to fabricate a test structure, with which multiple combinations of gate dielectric/conductor con ...


2
Richard W Jarvis, Iraj Emami, John L Nistler, Michael G McIntyre: Multipurpose defect test structure with switchable voltage contrast capability and method of use. Advanced Micro Devices, Kevin L Daffer, Conley Rose & Tayon P C, October 2, 2001: US06297644 (89 worldwide citation)

A test structure which includes alternating grounded and floating conductive lines may be used to test the formation of conductive features on an integrated circuit topography. During irradiation of the conductive lines from an electron source, the grounded conductive lines will appear darker than t ...


3
John L Nistler, Frederick N Hause, Phillip J Etter: Modifying a design layer of an integrated circuit using overlying and underlying design layers. Advanced Micro Devices, Kevin L Daffer, Conley Rose & Tayon, May 1, 2001: US06226781 (34 worldwide citation)

A computer-implemented method is provided in which a design layer of an integrated circuit is altered by spatial definition using underlying and overlying design layers. That is, the specific layers of an integrated circuit that impact the layer being modified are taken into account. According to an ...


4
John L Nistler: Silicon implantation into selective areas of a refractory metal to reduce consumption of silicon-based junctions during salicide formation. Advanced Micro Devices, Kevin L Conley Rose & Tayon Daffer, June 6, 2000: US06072222 (26 worldwide citation)

An integrated circuit fabrication process is provided for implanting silicon into select areas of a refractory metal to reduce the consumption of silicon-based junctions underlying those select areas during salicide formation. The refractory metal is subjected to a heat cycle to form salicide upon t ...


5
John L Nistler: Voting technique for the manufacture of defect-free printing phase shift lithography. Advanced Micro Devices, Benman & Collins, May 3, 1994: US05308722 (24 worldwide citation)

A combination of optimized layouts using a defect voting technique and the etched quartz approach is used to obtain a high probability of obtaining defect-free printing masks, or reticles 10. The defect voting technique as used herein refers to a technique whereby multiple patterns are overlaid in s ...


6
John L Nistler, Mark W Michael: Fabrication of a non-ldd graded p-channel mosfet. Advanced Micro Devices, Kevin L Conley Rose & Tayon Daffer, August 1, 2000: US06096616 (19 worldwide citation)

A transistor and transistor fabrication method are presented in which a graded junction is formed using a plurality of source/drain dopant implants. The implants are performed such that higher concentrations of dopant species are implanted at lower energies and lower dopant concentrations are implan ...


7
John L Nistler, Christopher H Raeder: Infrared inspection for determining residual films on semiconductor devices. Advanced Micro Devices, Timothy M Honeycutt, September 17, 2002: US06452180 (16 worldwide citation)

Various methods of inspecting a film on a semiconductor workpiece for a residue are provided. In one aspect, a method of inspecting a film on a semiconductor workpiece wherein the film has a known infrared signature is provided. The method includes heating the workpiece so that the film emits infrar ...


8
John L Nistler, Stuart E Brown: Phase-shift photomask for patterning high density features. Advanced Micro Devices, Williams Morgan & Amerson P C, June 25, 2002: US06410191 (5 worldwide citation)

A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second por ...


9
John L Nistler, Derick J Wristers: Method of adjusting currents on a semiconductor device having transistors of varying density. Advanced Micro Devices, July 4, 2000: US06083272 (4 worldwide citation)

A method of adjusting drive currents on a semiconductor device having transistors of various densities is disclosed. Consistent with the invention, off-state currents and drive currents associated with non-dense transistors on a first semiconductor device formed by a fabrication process are determin ...


10
John L Nistler, Stuart E Brown: Phase-shift photomask for patterning high density features. Advanced Micron Devices, Williams Morgan & Amerson, August 24, 2004: US06780568 (4 worldwide citation)

A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second por ...