1
John H McCoy, Paul A Sullivan: Alignment system and method with micromovement stage. Hughes Aircraft Company, Lewis B Sternfels, W H MacAllister, W J Bethurum, April 19, 1977: US04019109 (60 worldwide citation)

Alignment of a mask and a semiconductor wafer to be processed is effected by orthogonal and angular movements of the mask singly and in combination. A carrier for the mask is supported on four orthogonally positioned transducers which, when actuated to elongate or contract, produce carrier translati ...


2
John H McCoy: Multiple reticle stitching for scanning exposure system. Nikon Precision, Brian D Ogonowsky, Skjerven Morril MacPherson Franklin & Friel, August 1, 1995: US05437946 (42 worldwide citation)

An improved method for stitching together reticle patterns on a substrate is described. One or more reticles, whose reticle border patterns are to be blended together on the substrate, are provided on an X-Y movable stage in a scanning type exposure system. Each of the reticles has a border pattern ...


3
John H McCoy, Kyochi Suwa: Alignment system with large area search for wafer edge and global marks. Nikon Corporation, David T Millers, Skjerven Morrill MacPherson Franklin & Friel, July 15, 1997: US05648854 (31 worldwide citation)

A prealignment and global alignment system in a semiconductor wafer lithography system includes reflected light microscopes which form images of a wafer near a wafer loading position. The reflected light microscopes are mounted on the perimeter of a main projection lens assembly and have large objec ...


4
Arun A Aiyer, John H McCoy, Kyoichi Suwa, Henry K Chau: Wafer inspection method and apparatus using diffracted light. Nikon Corporation, Norman R Klivans, Skjerven Morrill MacPherson Franklin & Friel, July 7, 1998: US05777729 (28 worldwide citation)

Defects in a processed or partly processed semiconductor wafer, or other similar three-dimensional periodic pattern formed on a substrate surface, are detected by light diffraction. Incident monochromatic light is provided from an elongated and extended source to illuminate the entire wafer surface. ...


5
Michael R Sogard, John H McCoy: Semiconductor wafer alignment using backside illumination. Nikon Corporation, Norman R Klivans, Skjerven Morrill MacPherson, April 23, 2002: US06376329 (24 worldwide citation)

A projection exposure apparatus for exposing a semiconductor wafer to a pattern, formed on a reticle, using a projection lens system. An alignment optical system is disposed at a backside of the wafer which is remote from the projection lens system. The alignment optical system detects an alignment ...


6
John H McCoy, Paul A Sullivan: Hard X-ray and fluorescent X-ray detection of alignment marks for precision mask alignment. Hughes Aircraft Company, William J Bethurum, W H MacAllister, April 18, 1978: US04085329 (21 worldwide citation)

The specification describes a process wherein short wavelength or "hard" x-rays (less than about 4 Angstroms) are used to align a semiconductor processing mask with a semiconductor wafer without the requirement for thinning the wafer to permit the x-rays to pass through. These short wavelength x-ray ...


7
John H McCoy, Martin E Lee, Kyoichi Suwa: Direct reticle to wafer alignment using fluorescence for integrated circuit lithography. Nikon Precision, Norman R Klivans, Skjerven Morrill MacPherson Franklin & Friel, November 17, 1998: US05838450 (12 worldwide citation)

A mask alignment system for integrated circuit lithography achieves reticle to wafer referencing. A detection system located below the main projection lens detects the image of reticle alignment marks while also detecting wafer alignment marks. The reticle marks are imaged in light at the exposure w ...


8
John H McCoy, Kyoichi Suwa: Atomic force microscope measurement process for dense photoresist patterns. Nikon Corporation, Norman R Klivans, Skjerven Morrill MacPherson Franklin & Friel, April 21, 1998: US05741614 (12 worldwide citation)

Accurate measurement of the sidewalls of photoresist features formed on a semiconductor substrate is achieved by a double mask exposure process. This allows probing the sidewalls of closely spaced photoresist features with the probe tip of an atomic force microscope, in spite of the small (submicron ...


9
N William Parker, Daniel L Cavan, Alan D Brodie, John H McCoy: Proximity effect correction method through uniform removal of fraction of interior pixels. John M Macaulay, November 13, 2001: US06316164 (5 worldwide citation)

A proximity effect correction method for electron beam lithography suitable for use in a raster scan system. The exposure pattern consists of shapes; these shapes are subdivided into edge pixels and interior pixels; the pattern is then modified by uniformly removing a fraction of the interior pixels ...


10
Arun A Aiyer, John H McCoy, Henry K Chau: Thin film detection method and apparatus. Nikon Research Corporation of America, Norman R Klivans, Skjerven Morrill MacPherson Franklin & Friel, August 10, 1999: US05936254 (1 worldwide citation)

A method and apparatus for detecting the presence of a thin film such as a photoresist film on a semiconductor wafer or other substrate. Only when a film is present does the surface reflectance (reflective power) of light incident on the wafer surface vary sinusoidally when the incidence angle of th ...