1
John H Coleman: Method of forming semiconducting materials and barriers. Plasma Physics Corporation, October 7, 1980: US04226897 (71 worldwide citation)

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave an ...


2
John H Coleman: Method of forming semiconducting materials and barriers using a multiple chamber arrangement. Plasma Physics, November 28, 1995: US05470784 (43 worldwide citation)

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave an ...


3
John H Coleman: Method of forming semiconducting materials and barriers. Plasma Physics, May 4, 1982: US04328258 (31 worldwide citation)

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave an ...


4
John H Coleman, Tobin J Marks: Process for uranium isotope separation. Northwestern University, Plasma Physics Corporation, Michael G Berkman, June 27, 1978: US04097384 (25 worldwide citation)

Separation of U.sup.235 and U.sup.238 isotopes by converting a mixture of these isotopes to organic compounds or to silicon compounds and then irradiating the isotope compounds selectively to change their chemical (and/or physical) properties, thereby to facilitate separation. In a preferred embodim ...


5
John H Coleman: Method of forming semiconducting materials and barriers using a dual enclosure apparatus. Plasma Physics, February 16, 1993: US05187115 (24 worldwide citation)

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave an ...


6
John H Coleman: Method of forming semiconducting materials and barriers. Plasma Physics Corporation, May 18, 1982: US04330182 (19 worldwide citation)

Photovoltaic junctions useful for solar energy conversion and for electrophotographic image formation are fabricated from a layer of amorphous boron in contact with a layer of amorphous silicon. The amorphous boron is preferably deposited at a reduced temperature on the amorphous silicon; or, altern ...


7
John H Coleman: Method of forming semiconducting materials and barriers. Plasma Physics, September 17, 1991: US05049523 (13 worldwide citation)

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave an ...


8
John H Coleman: Glow discharge method and apparatus and photoreceptor devices made therewith. Plasma Physics Corporation, November 27, 1984: US04484809 (12 worldwide citation)

Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are al ...


9
Charles M Fortmann, John H Coleman, Serge Luryi, Ronald J Tonucci: Fabrication methods and structured materials for photonic devices. The Research Foundation of State University of New York, Baker Botts L, May 16, 2000: US06064511 (12 worldwide citation)

Structured materials for photonic devices, at wavelengths of X-ray, ultraviolet, visible, infrared and microwave radiation, can be made using layer growth techniques. Such a structure can be made layer by layer, by homogeneous deposition followed by localized modification for refractive index differ ...


10
John H Coleman: Glow discharge method and apparatus and photoreceptor devices made therewith. Plasma Physics Corporation, February 11, 1986: US04569719 (12 worldwide citation)

Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are al ...