1
John E Clarke, Edwin C Hardesty, George W Reichard Jr: Communication system cross-connect field power adapter. AT&T Information Systems, AT&T Technologies, David H Tannenbaum, September 16, 1986: US04611875 (74 worldwide citation)

A power adapter is disclosed for use in connecting electrical power to a telephone station via a cross-connect jack. The power adapter has a plug-end for mating with the cross-connect field and a jack-end for receiving a cross-connect patch cord. The power adapter includes a two-conductor permanentl ...


2
Donn Baker, John E Clarke, Chris G Johnson: Modular cross-connect panel. AT&T Information Systems, David H Tannenbaum, August 20, 1985: US04536052 (42 worldwide citation)

There is disclosed a cross-connect having a hinged rotating section panel which accepts multi-pair cables. The hinged section is mounted to a forward edge of a support section and the multi-pair cables are suspended between the two sections so that the cables remain in the same plane regardless of t ...


3
Austin M Andrews II, John E Clarke, Joseph T Longo, Edward R Gertner: High speed infrared detector. The United States of America represented by the Secretary of the Air Force, Joseph E Rusz, William J O Brien, October 11, 1977: US04053919 (15 worldwide citation)

A high speed infrared detector for use as a receiver in a 10.6.mu.m communication system and being composed of a Pb.sub.0.8 Sn.sub.0.2 Te crystalline substrate, a 10.6.mu.m absorbing layer on said substrate composed of a p-type Pb.sub.0.8 Sn.sub.0.2 Te material and a 10.6.mu.m transparent layer disp ...


4
Cheng Chi Wang, John G Pasko, Joseph T Longo, John E Clarke: Inverted heterojunction photodiode. Rockwell International Corporation, L Lee Humphries, Craig O Malin, January 8, 1980: US04183035 (13 worldwide citation)

A low-leakage, heterojunction photodiode for use as a detector sensitive to infrared radiation is provided. The diode structure comprises a PbTe substrate of n-type conductivity with an n-type epitaxial buffer layer on the substrate and an epitaxial active layer on the buffer layer. The buffer layer ...


5
Austin M Andrews II, John E Clarke, Edward R Gertner, Joseph T Longo, Richard C Eden: Inverted heterojunction photodiode. The United States of America represented by the Secretary of the Air Force, Joseph E Rusz, William J O Brien, May 3, 1977: US04021836 (8 worldwide citation)

An inverted heterojunction photodiode for use as a laser detector sensitive to the 8 - 14 .mu.m portion of the infrared spectrum and operable above 77.degree. K. The diode structure comprises a PbTe substrate, a first buffer layer of a Pb.sub..90 Sn.sub..10 Te material on said substrate and a second ...


6
John E Clarke, Vince Joseph Masterson, Ningsheng Zhu: Methods and apparatus for producing ultrasonic weld joints for injection molded plastic parts. Lucent Technologies, Priest & Goldstein PLLC, April 24, 2001: US06220777 (3 worldwide citation)

A step joint between two plastic pieces suitable for an ultrasonic weld joint. A first plastic piece includes a series of ribs, each rib having generally horizontal top surface. A generally vertical section extends upward behind the ribs. A second plastic piece includes a generally horizontal sectio ...


7

8

9

10