1
Robert A Barker, Chuang C Tsai, John C Knights: Controlled isotropic doping of semiconductor materials. Xerox Corporation, Serge Abend, October 6, 1987: US04698104 (48 worldwide citation)

A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon th ...


2
Henry R Till, Harold M Anderson, Gerald A Domoto, Aron Sereny, Joseph M Crowley, Richard G Crystal, John C Knights, Rodney B Proulx, Nicholas K Sheridon, John M Lennon, Stephan Drappel: Imaging apparatuses and processes. Xerox Corporation, Judith L Bynrick, January 5, 1993: US05176974 (33 worldwide citation)

Disclosed are ionographic imaging apparatuses and processes. One apparatus comprises an imaging means, means for applying to the imaging means a liquid material capable of forming a dielectric peel layer adhering to the imaging means, ionographic writing means for generating a latent image on the pe ...


3
Frank Jansen, Joseph Mort, Michael A Morgan, Steven J Grammatica, John C Knights: Electrophotographic devices containing compensated amorphous silicon compositions. Xerox Corporation, E O Palazzo, January 6, 1987: US04634647 (15 worldwide citation)

An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to ...


4
Robert A Street, James B Boyce, John C Knights: Image sensor with performance enhancing structures. Xerox Corporation, Patrick T Bever, Bever Hoffman & Harms, March 23, 2004: US06710370 (9 worldwide citation)

An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO


5
John C Knights: Glow discharge apparatus with squirrel cage electrode. Xerox Corporation, Douglas W Carothers Jr, December 6, 1983: US04418645 (7 worldwide citation)

In an r.f. glow discharge system, a plurality of hollow electrodes are positioned circumferentially about a central point forming a circular array or squirrel cage. A workpiece is supported within the squirrel cage and relative rotational movement between the squirrel cage and the workpiece is provi ...


6
John C Knights: Conductive bump with a plurality of contact elements. Palo Alto Research Center, Marger Johnson & McCollom PC, June 23, 2009: US07550846 (3 worldwide citation)

A method of forming a contact structure and a contact structure. The contact structure includes a contact location, and contact elements disposed substantially on the contact location, at least one such contact element including a deformable center and a conducting layer covering at least a part of ...


7
Patrick A O Connell, Robert L Battey, Maria S Donigan, So V Tien, John C Knights: Amorphous silicon electrographic writing head assembly with protective cover. Xerox Corporation, Lisa M Yamonaco, August 9, 1994: US05337080

An amorphous silicon electrographic writing head assembly which reduces the voltage drift in the high voltage driving transistor. The writing head including a substrate having a first surface and a second surface, the first surface having thin film elements fabricated thereon, the first surface havi ...


8
Robert A Street, Julie A Bert, John C Knights: Bendable TFT backplane with addressing contacts at opposite ends. PALO ALTO RESEARCH CENTER INCORPORATED, Fay Sharpe, February 5, 2019: US10197831

A flexible TFT backplane includes, a flexible substrate, a first set of address line contacts associated with the substrate, and a second set of address line contacts associated with the substrate. The first set of address line contacts and the second set of address line contacts are located at oppo ...


9
John C Knights: Contact structure formed by jet printing. Palo Alto Research Center Incorporated, Marger Johnson & Mccollom Parc, June 21, 2007: US20070138649-A1

A method of forming a contact structure and a contact structure. The contact structure includes a contact location, and contact elements disposed substantially on the contact location, at least one such contact element including a deformable center and a conducting layer covering at least a part of ...


10
Robert A Street, James B Boyce, John C Knights: Image sensor with performance enhancing structures. Bever Hoffman & Harms, July 10, 2003: US20030127647-A1

An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An e ...