1
John C Holst: Comparator cell for use in a content addressable memory. Intergraph Corporation, Philip H Townsend and Townsend and Crew Albert, January 28, 1997: US05598115 (55 worldwide citation)

A content-addressable memory wherein match transistors are prevented from discharging a match line by either placing transistors in series with the match transistors and only turning them on during a match sensing period, or a match sense line which is driven near the precharge voltage of the match ...


2
Imtiaz P Shaik, Dennis L Wendell, Benjamin S Wong, John C Holst, Donald A Draper, Amos Ben Meir, John G Favor: Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device. Advanced Micro Devices, Skjerven Morrill MacPherson Franklin & Friel L, July 6, 1999: US05920515 (53 worldwide citation)

A semiconductor memory array with Built-in Self-Repair (BISR) includes redundancy circuits associated with failed row address stores to drive redundant row word lines, thereby obviating the supply and normal decoding of a substitute addresses. NOT comparator logic compares a failed row address gener ...


3
Thomas H Lee, Mark G Johnson, John C Holst: Power supply independent temperature sensor. Advanced Micro Devices, Skjerven Morrill MacPherson, December 5, 2000: US06157244 (45 worldwide citation)

A temperature sensor is fabricated in an integrated circuit in combination with another device such as a microprocessor using a fabrication technology that is suitable for fabricating the device. Operation of the temperature sensor is based on the bandgap physics of semiconductors using a bandgap re ...


4
John C Holst: Decoder scheme for fully associative translation-lookaside buffer. Intergraph Corporation, March 29, 1994: US05299147 (37 worldwide citation)

A fully associative translation lookaside buffer (TLB) using a content addressable memory (CAM) array to store virtual addresses and a static random access memory (SRAM) array to store corresponding physical addresses. The TLB incorporates a logic circuit that allows the SRAM to be accessed during b ...


5
John C Holst: Pulsed ground circuit for CAM and PAL memories. Intergraph Corporation, Philip H Albert, Townsend and Townsend Khourie and Crew, August 29, 1995: US05446685 (34 worldwide citation)

A content-addressable memory wherein match transistors are prevented from discharging a match line by either placing transistors in series with the match transistors and only turning them on during a match sensing period, or a match sense line which is driven near the precharge voltage of the match ...


6
John C Holst: SOI with conductive metal substrate used as VSS connection. Advanced Micro Devices, Amin Eschweiler & Turocy, November 28, 2000: US06153912 (22 worldwide citation)

An SOI transistor structure and SOI circuit is disclosed. The SOI transistor structure includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer and includes a source region and a drain region therein with a chan ...


7
John C Holst: Register file with bypass capability. Intergraph Corporation, Townsend and Townsend and Crew, August 4, 1998: US05790461 (18 worldwide citation)

Control circuitry for a register file is provided which allows immediate or rapid output of input write data by bypassing the need to store the data and then read it out of the register file. In each pairing of memory cells, the read line is coupled to both the storage cell and to the write line. Th ...


8
John C Holst: Start-up circuit for write selects and equilibrates. Advanced Micro Devices, Ken J Koestner, Skjerven Morrill Macpherson Franklin & Friel, July 4, 2000: US06084454 (16 worldwide citation)

Some logic circuits preferentially reside in a particular state. Advantages are gained by a circuit that forces the circuit to the preferential state but allows the preferred state to be overridden. A node in the logic circuit is driven to a particular state, in one embodiment, by a pull-up transist ...


9
Bin Yu, John C Holst: MOSFET-type device with higher driver current and lower steady state power dissipation. Advanced Micro Devices, Monica M Choi, April 10, 2001: US06213869 (14 worldwide citation)

A coupling capacitor is coupled between the gate and the body region of a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The body region of the MOSFET is electrically isolated to form a floating body region. The capacitance of the coupling capacitor is designed such that a BJT (Bipolar ...


10
Richard K Klein, Asim A Selcuk, Nicholas J Kepler, Craig S Sander, Christopher A Spence, Raymond T Lee, John C Holst, Stephen C Horne: Forming local interconnects in integrated circuits. Advanced Micro Devices, Foley & Lardner, April 18, 2000: US06051881 (13 worldwide citation)

A method and the resulting device to permit the formation of minimal insulating space between polysilicon gates by forming an insulating layer over the polysilicon gates and protecting selected ones of the gates and the insulating layer with an etch barrier so that the opening for local interconnect ...