1
Jinman Han, Doogon Kim: Non-volatile memory device, erasing method thereof, and memory system including the same. Samsung Electronics, Harness Dickey & Pierce, October 8, 2013: US08553466 (226 worldwide citation)

Provided is an erasing method of a nonvolatile memory device. The erasing method applies a word line erase voltage to a plurality of word lines connected to the memory cells respectively, applies a specific voltage to a ground selection line connected to the ground selection transistor, applies an e ...


2
Changhyun Lee, Jinman Han, Doogon Kim, Sunghoi Hur, Jongin Yun: Nonvolatile memory device, programming method thereof and memory system including the same. Samsung Electronics, Harness Dickey & Pierce, October 29, 2013: US08570805 (31 worldwide citation)

Provided is a programming method of a nonvolatile memory device. The nonvolatile memory device includes a substrate and a plurality of memory cells which are stacked in the direction perpendicular to the substrate. The programming method applies a first voltage to a selected bit line connected to at ...


3
Jinman Han, Sunil Shim, Hansoo Kim, Jaehoon Jang, Byoungkeun Son: Nonvolatile memory device, operating method thereof, and memory system including the same. Samsung Electronics, Harness Dickey & Pierce, October 15, 2013: US08559224 (15 worldwide citation)

Provided is a method of operating a nonvolatile memory device that includes a substrate and memory blocks having a plurality of memory cells stacked along a direction perpendicular to the substrate. The method includes: reading data from a selected sub block among sub blocks of a selected memory blo ...


4
Donghyuk Chae, Jinman Han: Flash memory devices having multi-bit memory cells therein with improved read reliability. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, July 2, 2013: US08479083 (13 worldwide citation)

Integrated circuit memory devices include an array of nonvolatile N-bit memory cells, where N is an integer greater than one. Control circuitry is also provided to reliably read data from the N-bit memory cells. This control circuitry, which is electrically coupled to the array, is configured to det ...


5
Ho Chul Lee, Doogon Kim, Jinman Han: Nonvolatile memory devices, memory systems and computing systems. Samsung Electronics, Harness Dickey & Pierce, July 29, 2014: US08792282 (12 worldwide citation)

A nonvolatile memory device configured to apply a wordline erase voltage to a plurality of wordlines connected to a plurality of memory cells, apply an erase voltage to a substrate where a memory cell string is formed while applying a specific voltage to at least one ground selection line connected ...


6
Sangyong Yoon, Kitae Park, Jinman Han, Wonseok Lee: Data storage system having multi-bit memory device and operating method thereof. Samsung Electronics, Volentine & Whitt PLLC, January 15, 2013: US08355280 (11 worldwide citation)

A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory and which controls the non-volatile memory device. The operating method of the data storage device includes storing data in the buffer memory accordi ...


7
Kitae Park, Donghyuk Chae, Jinman Han: Nonvolatile memory devices and program methods thereof in which a target verify operation and a pre-pass verify operation are performed simultaneously using a common verify voltage. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, November 6, 2012: US08305817 (11 worldwide citation)

Provided are nonvolatile memory devices and program methods thereof. A nonvolatile memory device provides a program voltage to a selected word line and performs a program verify operation. The nonvolatile memory device controls a bit line voltage of the next program loop according to the program ver ...


8
Sang Hyun Joo, Kitae Park, Sangyong Yoon, Jinman Han: Memory system and operating method thereof. Samsung Electronics, Stanzione & Kim, August 19, 2014: US08812933 (9 worldwide citation)

A memory system includes a nonvolatile memory device and a memory controller configured to control the nonvolatile memory device and configured to provide the nonvolatile memory device with error flag information including error location information of an error of data read from the nonvolatile memo ...


9
Jinman Han, Sangyong Yoon: Nonvolatile memory device, memory system incorporating same, and method of operating same. Samsung Electronics, Volentine & Whitt PLLC, April 23, 2013: US08427871 (9 worldwide citation)

A nonvolatile memory device performs a program operation comprising applying a program pulse to selected memory cells, detecting a number of fail bits among the selected memory cells, the fail bits comprising failed program bits and disturbed inhibit bits, and determining a program completion status ...


10
Sunil Shim, Jinman Han, Sang Wan Nam, Won Taeck Jung: Control method of nonvolatile memory device. Samsung Electronics, Harness Dickey & Pierce, December 9, 2014: US08908431 (7 worldwide citation)

According to example embodiments, a control method of a nonvolatile memory device, which includes a plurality of memory blocks on a substrate, each memory block including a plurality of sub blocks stacked in a direction perpendicular to the substrate and being configured to be erased independently a ...