1
Yunyu Wang, Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Dry-etch for silicon-and-nitrogen-containing films. Applied Materials, Kilpatrick Townsend & Stockton, February 4, 2014: US08642481 (90 worldwide citation)

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrat ...


2
Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Selective etch of silicon by way of metastable hydrogen termination. Applied Materials, Kilpatrick Townsend & Stockton, August 19, 2014: US08808563 (86 worldwide citation)

Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the pla ...


3
Yunyu Wang, Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Selective suppression of dry-etch rate of materials containing both silicon and oxygen. Applied Materials, Kilpatrick Townsend & Stockton, March 25, 2014: US08679982 (86 worldwide citation)

A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The ...


4
Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Conformal oxide dry etch. Applied Materials, Kilpatrick Townsend & Stockton, July 28, 2015: US09093390 (85 worldwide citation)

A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates up and down the sides of the trench. One disclosed method includes a sequential introduction of (1) a hydrogen-containing precursor and then (2) a fluorine-containing precursor into a substrate proc ...


5
Jingchun Zhang, Anchuan Wang, Nitin Ingle: Methods for etch of sin films. Applied Materials, Kilpatrick Townsend & Stockton, April 7, 2015: US08999856 (85 worldwide citation)

A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a ...


6
Jingchun Zhang, Anchuan Wang, Nitin Ingle: Methods for etch of metal and metal-oxide films. Applied Materials, Kilpatrick Townsend & Stockton, June 23, 2015: US09064815 (85 worldwide citation)

A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to g ...


7
Zhijun Chen, Jingchun Zhang, Ching Mei Hsu, Seung Park, Anchuan Wang, Nitin K Ingle: Radical-component oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023734 (84 worldwide citation)

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a ...


8
Yunyu Wang, Anchuan Wang, Jingchun Zhang, Nitin K Ingle, Young S Lee: Selective suppression of dry-etch rate of materials containing both silicon and nitrogen. Applied Materials, Kilpatrick Townsend & Stockton, March 25, 2014: US08679983 (84 worldwide citation)

A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is ...


9
Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K Ingle, Seung Park, Zhijun Chen, Ching Mei Hsu: Selective titanium nitride etching. Applied Materials, Kilpatrick Townsend & Stockton, December 30, 2014: US08921234 (83 worldwide citation)

Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into ...


10
Seung H Park, Yunyu Wang, Jingchun Zhang, Anchuan Wang, Nitin K Ingle: Differential silicon oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 19, 2015: US09034770 (83 worldwide citation)

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing regi ...