1
Jin Wu, Liang Bih Lin, Jennifer Y Hwang: Photoconductive imaging members. Xerox Corporation, E O Palazzo, July 5, 2005: US06913863 (143 worldwide citation)

A photoconductive imaging member including a hole blocking layer, a photogenerating layer, and a charge transport layer, and wherein the hole blocking layer contains, for example, a metal oxide; and a mixture of a phenolic compound and a phenolic resin, and wherein the phenolic compound can contain ...


2
Jin Wu, Liang Bih Lin, John S Chambers: Photoconductive imaging members. Xerox Corporation, E O Palazzo, May 2, 2006: US07037631 (62 worldwide citation)

A photoconductive imaging member including a supporting substrate, a hole blocking layer thereover, a crosslinked photogenerating layer and a charge transport layer, and wherein the photogenerating layer includes a photogenerating component and a vinyl chloride, allyl glycidyl ether, hydroxy contain ...


3
Weng Jin Wu, Ying Ching Shih, Wen Chih Chiou, Shin Puu Jeng, Chen Hua Yu: Multi-die stacking using bumps with different sizes. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, March 11, 2014: US08669174 (57 worldwide citation)

A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first ...


4
Wen Jin Wu, Wen Chih Chiou, Shau Lin Shue: Temporary carrier bonding and detaching processes. Taiwan Semiconductor Manufacturing Company, Lowe Hauptman Ham & Berner, February 8, 2011: US07883991 (40 worldwide citation)

A method of bonding and detaching a temporary carrier used for handling a wafer during the fabrication of semiconductor devices includes bonding a wafer onto a carrier through a first adhesive layer and a second adhesive layer, in which the edge zone of the wafer and the carrier is covered by the fi ...


5
Weng Jin Wu, Wen Chih Chiou: Three dimensional integrated circuit and method of making the same. Taiwan Semiconductor Manufacturing, Duane Morris, June 10, 2008: US07385283 (33 worldwide citation)

A three dimensional integrated circuit structure includes at least first and second devices, each device comprising a substrate and a device layer formed over the substrate, the first and second devices being bonded together in a stack, wherein the bond between the first and second devices comprises ...


6
Wen Chih Chiou, Chen Hua Yu, Weng Jin Wu: Formation of through via before contact processing. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, May 10, 2011: US07939941 (25 worldwide citation)

The formation of through silicon vias (TSVs) in an integrated circuit (IC) die or wafer is described in which the TSV is formed in the integration process prior to contact or metallization processing. Contacts and bonding pads may then be fabricated after the TSVs are already in place, which allows ...


7
Liang Bih Lin, Jin Wu, Geoffrey M T Foley, Yonn K Rasmussen: Photoconductive imaging members. Xerox Corporation, Eugene O Palazzo, December 25, 2007: US07312007 (24 worldwide citation)

A photoconductive member containing a hole blocking layer, a photogenerating layer, and a charge transport layer, and wherein the hole blocking layer contains a metallic component like a titanium oxide and a polymeric binder.


8
Liang Bih Lin, Robert C U Yu, Francisco Lopez, Jin Wu, John S Chambers: Imaging members. Xerox Corporation, Eugene O Palazzo, Fay Sharpe, August 19, 2008: US07413835 (24 worldwide citation)

An electrophotographic imaging member having a thermoplastic charge transport layer comprising a charge transport compound, a polycarbonate polymer binder, a particulate dispersion, and a high boiler compatible organic liquid. The disclosed charge transport layer exhibits enhanced wear resistance, e ...


9
Wen Chih Chiou, Weng Jin Wu: Backside metal of redistribution line with silicide layer on through-silicon via of semiconductor chips. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, September 11, 2012: US08264077 (22 worldwide citation)

An integrated circuit structure includes a semiconductor substrate having a front side and a backside. A through-silicon via (TSV) penetrates the semiconductor substrate. The TSV has a back end extending to the backside of the semiconductor substrate. A redistribution line (RDL) is over the backside ...


10
Chen Hua Yu, Wen Chih Chiou, Weng Jin Wu: Through-substrate vias (TSVs) electrically connected to a bond pad design with reduced dishing effect. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, November 8, 2011: US08053900 (22 worldwide citation)

An integrated circuit structure includes a semiconductor chip, which further includes a first surface; and a patterned bond pad exposed through the first surface. The patterned bond pad includes a plurality of portions electrically connected to each other, and at least one opening therein. The integ ...