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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023732 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, July 28, 2015: US09093371 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


3
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, October 6, 2015: US09153442 (84 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, November 10, 2015: US09184055 (82 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


5
Soonam Park, Yufei Zhu, Edwin C Suarez, Nitin K Ingle, Dmitry Lubomirsky, Jiayin Huang: Systems and methods for internal surface conditioning in plasma processing equipment. Applied Materials, Kilpatrick Townsend & Stockton, May 31, 2016: US09355922 (50 worldwide citation)

A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite ...


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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, September 20, 2016: US09449850 (38 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 23, 2017: US09659792 (25 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


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Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, July 11, 2017: US09704723 (20 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


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Lin Xu, Zhijun Chen, Jiayin Huang, Anchuan Wang: Removal methods for high aspect ratio structures. Applied Materials, Kilpatrick Townsend & Stockton, September 19, 2017: US09768034 (19 worldwide citation)

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The met ...


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Soonam Park, Yufei Zhu, Edwin C Suarez, Nitin K Ingle, Dmitry Lubomirsky, Jiayin Huang: Systems and methods for internal surface conditioning assessment in plasma processing equipment. Applied Materials, Kilpatrick Townsend & Stockton, May 8, 2018: US09966240 (4 worldwide citation)

In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a pe ...