1
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states. SanDisk Corporation, Skjerven Morrill, February 18, 2003: US06522580 (739 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


2
Jian Chen: Selective operation of a multi-state non-volatile memory system in a binary mode. SanDisk Corporation, Skjerven Morrill, September 24, 2002: US06456528 (674 worldwide citation)

A flash non-volatile memory system that normally operates its memory cells in multiple storage states is provided with the ability to operate some selected or all of its memory cell blocks in two states instead. The two states are selected to be the furthest separated of the multiple states, thereby ...


3
Jian Chen, Yupin Fong: High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates. SanDisk Corporation, Majestic Parsons Siebert & Hsue, February 2, 1999: US05867429 (421 worldwide citation)

Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive s ...


4
Douglas J Lee, Jian Chen: Multi-state non-volatile flash memory capable of being its own two state write cache. SanDisk Corporation, Majestic Parsons Siebert & Hsue, July 27, 1999: US05930167 (349 worldwide citation)

A memory system including an array of flash EEPROM cells arranged in blocks of cells that are erasable together, with individual cells storing more than one bit of data as a result of operating the individual cells with more than two detectable threshold ranges or states. Any portion of the array in ...


5
Jian Chen, Chi Ming Wang: Variable programming of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, March 28, 2006: US07020017 (318 worldwide citation)

Systems and methods in accordance with various embodiments can provide for reduced program disturb in non-volatile semiconductor memory. In one embodiment, select memory cells such as those connected to a last word line of a NAND string are programmed using one or more program verify levels or volta ...


6
Raul Adrian Cernea, Khandker N Quader, Yan Li, Jian Chen, Yupin Fong: Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, August 24, 2004: US06781877 (303 worldwide citation)

Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first p ...


7
Tomoharu Tanaka, Jian Chen: Non-volatile semiconductor memory device adapted to store a multi-valued data in a single memory cell. Kabushiki Kaisha Toshiba, SanDisk Corporation, Banner & Witcoff, November 4, 2003: US06643188 (290 worldwide citation)

A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL t ...


8
Yan Li, Jian Chen, Raul Adrian Cernea: Operating techniques for reducing program and read disturbs of a non-volatile memory. SanDisk Corporation, Parsons Hsue & de Runtz, August 3, 2004: US06771536 (270 worldwide citation)

The present invention presents a non-volatile memory having a plurality of erase units or blocks, where each block is divided into a plurality of parts sharing the same word lines to save on the row decoder area, but which can be read or programmed independently. An exemplary embodiment is a Flash E ...


9
Jeffrey W Lutze, Jian Chen, Yan Li, Masaaki Higashitani: Source side self boosting technique for non-volatile memory. SanDisk Corporation, Vierra Magen Marcus Harmon & DeNiro, February 22, 2005: US06859397 (258 worldwide citation)

A non-volatile semiconductor memory system (or other type of memory system) is programmed in a manner that avoids program disturb. In one embodiment that includes a flash memory system using a NAND architecture, program disturb is avoided by increasing the channel potential of the source side of the ...


10
Jian Chen: Compensating for coupling during read operations of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus & DeNiro, March 27, 2007: US07196928 (247 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pr ...



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