1
Jia Sheng Lee: Method for forming a thin-film resistor. United Microelectronics, Charles C H Wu, Charles C H Wu & Associates, August 14, 2001: US06272736 (52 worldwide citation)

A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor tha ...


2
Chao Tzung Tsai, Jia Sheng Wu, Fuxuan Fang: Method to control critical dimension of a hard masked pattern. Taiwan Semiconductor Manufacturing Company, April 12, 2005: US06878646 (16 worldwide citation)

A method of reducing the critical dimension (CD) of a hard mask by a wet etch method is described. An oxide hard mask is treated with a H2SO4/H2O2 (SPM) solution followed by treatment with a NH4OH/H2O2/H2O (APM) solution to trim the CD by 0 to 20 nm. With nitride or oxynitride hard masks, a buffered ...


3
Jia Sheng Lee: Method for manufacturing thin-film resistor. United Microelectronics, March 27, 2001: US06207560 (16 worldwide citation)

A dual damascene method is described for manufacturing a multilevel metal interconnect with a thin film resistor. A substrate is provided. An insulating layer is formed on the substrate. A dual damascene structure is formed in the insulating layer. A thin film resistor layer is formed over the subst ...


4
Jia Sheng Lee: Method of fabricating layered integrated circuit. United Microelectronics, Thomas Kayden Horstemeyer & Risley, June 6, 2000: US06071763 (10 worldwide citation)

A method of fabricating layered integrated circuits on a silicon wafer utilizes the buried oxide insulating layer of a SOI structure for isolating junction devices such as diodes, well resistors, N.sup.30 resistors, P.sup.30 resistors, and bipolar junction transistors from MOS transistors. Consequen ...


5
Jia Sheng Lin: Connector marked with polarity. June 22, 2004: US06752650 (9 worldwide citation)

A connector marked with polarity includes a front body, a terminal base, a cable constrictor and a colored ring. The front body has a small diameter portion, a smooth annular surface portion, a male threaded rear end portion and a center lengthwise hole for the terminal base and the cable constricto ...


6
Jia Sheng Lee: Method of fabricating a thin-film resistor having stable resistance. United Microelectronics, Winston Hsu, May 1, 2001: US06225183 (7 worldwide citation)

The present invention provides a method of forming a thin-film resistor with a stable electric resistance on a dielectric layer of a semiconductor wafer. The method involves: 1. forming a resistance layer and a protective layer in a predetermined area of the dielectric layer, the protective layer be ...


7
Jia Sheng Lee: Stacked semiconductor structure for high integration of an integrated circuit with junction devices. United Microelectronics, Jiawei Huang, J C Patents, September 26, 2000: US06124615 (7 worldwide citation)

A stacked semiconductor structure is designed for component arrangement of an IC (integrated circuit) device having a large number of various types of junction devices, such as diodes, well resistors, N.sup.+ resistors, and BJTs (bipolar junction transistors) and MOS (metal-oxide semiconductor) tran ...


8
Jia Sheng Lee: Photo diode. United Microelectronics, Thomas Kayden Horstemeyer & Risley, September 19, 2000: US06121667 (6 worldwide citation)

A photo diode is provided, which can polarize incident light before the light is sensed by the light-sensitive area of the photo diode so that the photo diode is capable of detecting the intensity of the light that is polarized in a specific direction. The photo diode includes a light-sensitive stru ...


9
Jia Sheng Lee: Method of fabricating thin-film transistor. United Microelectronics, Thomas Kayden Horstemeyer & Risley, May 8, 2001: US06228735 (5 worldwide citation)

A method of fabricating thin film transistor. A thin oxide layer is formed as a protection layer for a thin film transistor. Since the oxide layer does not affect the fabrication process of a barrier layer, the thin oxide layer can be formed as the protection layer to protect the thin-film resist la ...


10
Jia Sheng Lee: Method of manufacturing thin film resistor layer. United Microelectronics, Thomas Kayden Horstemeyer & Risley, September 12, 2000: US06117789 (5 worldwide citation)

A method of manufacturing a thin film resistor layer. A first insulating layer is formed on a substrate, wherein the substrate has at least a device previously formed therein. A thin film resistor layer is formed on the first insulating layer. A second insulating layer is formed on the thin film res ...