1
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, August 31, 2010: US07786320 (16 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


2
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Hultquist IP, Margaret Chappuis, March 22, 2011: US07910765 (11 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


3
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Hultquist PLLC, Mary B Grant, Margaret Chappuis, April 10, 2012: US08153833

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


4
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, July 28, 2011: US20110183528-A1

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SioxNy) and/or silicon ...


5
Henry A Nye III, Jeffrey F Roeder, Ho Ming Tong, Paul A Totta: Electroplated solder terminal. International Business Machines Corporation, Kris V Srikrishnan, April 2, 1996: US05503286 (66 worldwide citation)

A process for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A pro ...


6
Birendra N Agarwala, Madhav Datta, Richard E Gegenwarth, Christopher V Jahnes, Patrick M Miller, Henry A Nye III, Jeffrey F Roeder, Michael A Russak: Etching processes for avoiding edge stress in semiconductor chip solder bumps. International Business Machines Corporation, Harold Huberfeld, December 7, 1993: US05268072 (66 worldwide citation)

Etching processes are disclosed for producing a graded or stepped edge profile in a contact pad formed between a chip passivating layer and a solder bump. The stepped edge profile reduces edge stress that tends to cause cracking in the underlying passivating layer. The pad comprises a bottom layer o ...


7
Gregory T Stauf, Jeffrey F Roeder, Thomas H Baum: Liquid delivery MOCVD process for deposition of high frequency dielectric materials. Advanced Technology Materials, Steven J Hultquist, Robert A McLauchlan, Oliver A M Zitzmann, August 21, 2001: US06277436 (64 worldwide citation)

A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100° C. to about 300° C. and carried via a carrier gas such a ...


8
Henry A Nye III, Jeffrey F Roeder, Ho Ming Tong, Paul A Totta: Electroplated solder terminal. International Business Machines Corporation, Kris V Srikrishnan, May 13, 1997: US05629564 (56 worldwide citation)

A structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A p ...


9
Thomas H Baum, Chongying Xu, Bryan C Hendrix, Jeffrey F Roeder: Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same. Advanced Tehnology Materials, Margaret Chappuis, Steven Hultquist Esq, March 22, 2005: US06869638 (51 worldwide citation)

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluo ...


10
Thomas H Baum, Chongying Xu, Bryan C Hendrix, Jeffrey F Roeder: Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same. Advanced Technology Materials, Maggie Chappuis, Marianne Fuierer, John Boyd, February 28, 2006: US07005392 (37 worldwide citation)

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independent ...