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Chantal Arena, Jean Pierre Joly, Patrice Noel, Michel Papapietro: Gaseous phase chemical treatment reactor. Commissariat a l Energie Atomique, Hayes Soloway Hennessey & Hage, August 3, 1993: US05232508 (35 worldwide citation)

The invention relates to a gaseous phase chemical treatment reactor for wafers. The aim of the invention is to produce a reactor in which only the face of the wafer to be treated is in fact treated. This aim is achieved with the aid of a reactor comprising at least one treatment chamber (19) located ...


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Jean Pierre Joly, Laurent Ulmer, Guy Parat: Integrated circuit on high performance chip. Commissariat a l Energie Atomique, Brinks Hofer Gilson & Lione, November 1, 2011: US08048766 (30 worldwide citation)

A method of fabricating a die containing an integrated circuit, including active components and passive components, includes producing a first substrate containing at least one active component of active components and a second substrate containing critical components of the passive components, such ...


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Jean Pierre Joly, Gerard Nicolas, Michel Bruel: Process for selective transfer of a microstructure formed on an initial substrate to a final substrate. Commissariat a l Energie Atomique, Pearne & Gordon, December 12, 2000: US06159323 (30 worldwide citation)

Process for transfer of a microstructure (12) from an initial substrate (10) to a final substrate (32). The process includes the following steps in sequence:


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Jean Pierre Joly, Bernard Aspar, Béatrice Biasse, Marc Zussy: Process for the manufacture of passive and active components on the same insulating substrate. Commissariat a l&apos Energie Atomique, Burns Doane Swecker & Mathis, March 6, 2001: US06197695 (27 worldwide citation)

This invention relates to a process for the manufacture of one electronic structure comprising at least one active component and at least one passive component or element on a support substrate made of an insulating material. A characteristic process comprises the following steps:


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Jean Pierre Joly, Michel Bruel, Claude Jaussaud: Thin layer semi-conductor structure comprising a heat distribution layer. Soitec, Hutchison Law Group PLLC, November 27, 2007: US07300853 (16 worldwide citation)

The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from the support substr ...


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Herve Achard, Jean Pierre Joly: Non-volatile storage cell of the metal - ferroelectric - semiconductor type. Commissariat a l Energie Atomique, Hayes Soloway Hennessey Grossman & Hage, December 13, 1994: US05373462 (14 worldwide citation)

A process for producing an improved non-volatile storage cell of the metal-ferroelectric-semiconductor type is provided. The non-volatile storage cell has at least one metal-ferroelectric-semiconductor transistor formed in a semiconductor substrate and having a source (5), a drain (6), and a gate (4 ...


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Philippe Parmentier, Jean Pierre Joly, Alain Perrard: Preparation of a catalyst support in activated carbon fibres. Messier Bugatti, Weingarten Schurgin Gagnebin & Lebovici, May 7, 2002: US06383972 (3 worldwide citation)

A carbon fiber fabric having large specific surface area is made using a rayon precursor, and a catalyst is fixed on the fabric by impregnation or by cationic exchange. The carbon fiber fabric has pores with a mean size lying in the range 0.3 nm to 3 nm, a carbon content greater than 99%, and a high ...


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Jean Charles Souriau, Nicolas Sillon, Jean Pierre Joly: Production of cavities that can be filled with a fluid material in an optical microtechnological component. Commissariat a l Energie Atomique, Pearne & Gordon, August 21, 2012: US08246184

A novel method makes it possible to form cavities intended to contain a liquid with determined optical properties within a film for optical use. The walls (38) of the cavities (40) are formed by plasma etching of a layer of transparent or light absorbent material (30, 34) transferred onto a microtec ...