1
Jayant K Bhagat: Miniature inductor for integrated circuits and devices. December 3, 1991: US05070317 (138 worldwide citation)

Spaced apart conductive strips are provided in a first and third of three layers covering a semiconductor substrate. Magnetic core material is included in the second layer so as to be interposed between the conductive strips of the first and second layers. The first and second layers are joined at s ...


2
Jayant K Bhagat, David S Howarth: Gas sensor and method of fabricating same. General Motors Corporation, Robert J Wallace, May 26, 1987: US04668374 (35 worldwide citation)

A rapid-response gas sensor for measuring the relative presence of a gas in a mixture of gases and its method of manufacture. The sensor is fabricated using microelectronics technology to form multiple thin-film solid-electrolyte pump and sense cells within a hermetically sealed sensor cavity.


3
Jayant K Bhagat, Martin C Steele: Method for controlling plasma etching rates. General Motors Corporation, Douglas D Fekete, September 16, 1980: US04222838 (20 worldwide citation)

In a preferred embodiment, the etch rate of a silicon-containing surface subjected to a RF discharge plasma containing reactive etching species is selectively affected by electrically insulating the surface from the plasma-generating RF power source and by applying to the surface a predetermined tim ...


4
Jayant K Bhagat: Silicon nitride formation and use in self-aligned semiconductor device manufacturing method. General Motors Corporation, Robert J Wallace, March 18, 1986: US04575921 (18 worldwide citation)

A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and ...


5
Jayant K Bhagat: Lateral dual gate thyristor and method of fabricating same. General Motors Corporation, R J Wallace, November 22, 1988: US04786958 (17 worldwide citation)

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an e ...


6
Jayant K Bhagat: Method of fabricating a lateral dual gate thyristor. General Motors Corporation, Robert J Wallace, August 29, 1989: US04861731 (10 worldwide citation)

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an e ...


7
Jayant K Bhagat: Silicon nitride formation and use in self-aligned semiconductor device manufacturing method. General Motors Corporation, Robert J Wallace, July 9, 1985: US04528211 (9 worldwide citation)

A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and ...


8
Joseph V Mantese, Adolph L Micheli, Jayant K Bhagat, David B Hicks: Method of producing a miniature internal reference gas chamber within an automotive, internal reference, solid electrolyte, lean oxygen sensor. General Motors Corporation, Domenica N S Hartman, March 7, 1989: US04810529 (9 worldwide citation)

A method of producing a miniaturized, fixed volume, internal reference gas chamber comprising the pores of a porous material, suitable for use in a rapid response, highly precise, internal reference, solid electrolyte electrochemical-type oxygen sensor capable of detecting oxygen partial pressures i ...


9
Jayant K Bhagat: Thyristor with turn-off FET. General Motors Corporation, Robert J Wallace, September 9, 1986: US04611235 (8 worldwide citation)

A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off ...


10
Jayant K Bhagat: Insulated gate-controlled thyristor. General Motors Corporation, Robert J Wallace, December 16, 1986: US04630092 (8 worldwide citation)

A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off ...