1
Jaroslav Hynecek, Wen H Ko, Eugene T Yon: Miniature pressure transducer for medical use and assembly method. Case Western Reserve University, McNenny Pearne Gordon Gail Dickinson & Schiller, May 17, 1977: US04023562 (144 worldwide citation)

A fluidtight, hermetically sealed, miniature transducer adapted to be inserted into the human body and useful for directly monitoring internal fluid or pneumatic pressures within the human body is disclosed. Semiconductor strain gauge elements constituting a piezoresistive bridge are formed by diffu ...


2
Jaroslav Hynecek: Stratified photodiode for high resolution CMOS image sensor implemented with STI technology. Intellectual Ventures II, McAndrews Held & Malloy, February 21, 2012: US08120069 (100 worldwide citation)

A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and ...


3
Jaroslav Hynecek: Image sensor array. Texas Instruments Incorporated, George L Craig, Leo N Heiting, Melvin Sharp, April 4, 1989: US04819070 (76 worldwide citation)

An image sensor array (12) is comprised of a plurality of sensor elements (60) arranged in rows (62) and columns (64). Each element (60) is operable to modulate an output voltage signal responsive to charge accumulating in its gate region (70) responsive to incident light. Circuitry (74, 84, 78, 72) ...


4
Jaroslav Hynecek: Virtual phase charge transfer device. Texas Instruments Incorporated, Gary C Honeycutt, Richard L Donaldson, Melvin Sharp, October 21, 1980: US04229752 (68 worldwide citation)

A uniphase, buried-channel, semiconductor charge transfer device wherein a portion of each cell includes an inversion layer, or "virtual electrode" at the semiconductor surface, shielding that region from any gate-induced change in potential. Each cell is comprised of four regions (I, II, III, IV) w ...


5
Jaroslav Hynecek: Charge multiplying detector (CMD) suitable for small pixel CCD image sensors. Texas Instruments Incorporated, Alan K Stewart, Richard L Donaldson, William E Hiller, August 9, 1994: US05337340 (64 worldwide citation)

Generally, and in one form of the invention, a method for multiplying charge in a CCD cell is disclosed comprising the step of causing impact ionization of charge carriers in the CCD cell.


6
Jaroslav Hynecek: Bulk charge modulated transistor threshold image sensor elements and method of making. Texas Instruments Incorporated, George L Craig, Thomas W DeMond, Melvin Sharp, February 13, 1990: US04901129 (41 worldwide citation)

A bulk charge modulated transistor threshold sensing element (12) comprises a first region (18) having an enclosed structure, a gate region (24) that is preferably generally endless in shape, and a second region (26) to the interior of the gate region (24). The gate region (24) is doped and biased s ...


7
Jaroslav Hynecek: Semiconductor image intensifier. Isetex, John E Vandigriff, August 21, 2001: US06278142 (39 worldwide citation)

A charge carrier multiplier is disclosed in which a carrier that passes through a high-field region lying entirely within the depleted semiconductor volume causes a single-step impact ionization without avalanching. By spacing the high-field region sufficiently away from any substrate region that is ...


8
Jaroslav Hynecek: Method of making top buss virtual phase frame interline transfer CCD image sensor. Texas Instruments Incorporated, Troy J Cole, Richard A Stoltz, Richard L Donaldson, September 29, 1992: US05151380 (37 worldwide citation)

In one embodiment of the invention, a method for fabricating a virtual phase image sensor is disclosed comprising the steps of forming a semiconductor substrate of a first conductivity type, forming a buried channel region of a second conductivity type in the substrate, forming a virtual gate of the ...


9
Jaroslav Hynecek: Gated vertical punch through device used as a high performance charge detection amplifier. Isetex, John E Vandigriff, July 11, 2006: US07075575 (35 worldwide citation)

A charge detection system used in an image sensor consists of the vertical punch through transistor with the gate surrounding its source and connected to it. The charge detector has a large conversion gain, high dynamic range, low reset feed through, and low noise. It senses charge nondestructively, ...


10
Jaroslav Hynecek: Top buss virtual phase frame interline transfer CCD image sensor. Texas Instruments Incorporated, Alan K Stewart, Richard L Donaldson, William E Hiller, February 15, 1994: US05286990 (34 worldwide citation)

A virtual phase image sensor has majority carriers supplied to a virtual gate 24 by a conductor 32 overlying the image sensor, the virtual gate 24 and the conductor 32 each in contact with a conductive channel stop region 30.