1
Hwa Cheng, James M DePuydt, Michael A Haase, Jun Qiu: Growth of II VI laser diodes with quantum wells by atomic layer epitaxy and migration enhanced epitaxy. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, March 7, 1995: US05395791 (119 worldwide citation)

A method for using atomic layer epitaxy (ALE) and/or migration enhanced epitaxy (MEE) to grow high efficiency quantum wells in II-VI laser diodes. The substrate and previously grown layers of the laser diode are heated to a temperature less than or equal to about 200.degree. C. in an MBE chamber. So ...


2
William A Challener, James M DePuydt, William A Tolbert: Optical sensor having dielectric film stack. Imation, Eric D Levinson, November 20, 2001: US06320991 (59 worldwide citation)

A method and apparatus for optically assaying a targeted substance in a sample using a sensor comprising a dielectric film stack having a plurality of dielectric layers. For at least one angle of incidence the dielectric layers operate as a waveguide for light incident upon the sensor. In one config ...


3
James M DePuydt, Nang T Tran, James C Brown, Thomas J Staiger, John C Dahlquist, Meredith J Williams: Multi-module radiation detecting device and fabrication method. Minnesota Mining and Manufacturing Company, Carolyn A Bates, Steven J Shumaker, June 3, 1997: US05635718 (49 worldwide citation)

A multi-module radiation detecting device, a radiation detecting module for incorporation in a multi-module radiation detecting device, and a method for assembling a multi-module radiation detecting device are provided. The radiation detecting module includes a carrier substrate and a radiation dete ...


4
Michael A Haase, Hwa Cheng, James M DePuydt, Jun Qiu: Blue-green laser diode. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Walter C Linder, March 1, 1994: US05291507 (35 worldwide citation)

A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the f ...


5
Michael A Haase, Jun Qiu, Hwa Cheng, James M DePuydt: Buried ridge II-VI laser diode. Minnesota Mining & Manufacturing Compay, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, April 4, 1995: US05404027 (31 worldwide citation)

A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.


6
Robert M Park, James M DePuydt, Hwa Cheng, Michael A Haase: Doping of IIB-VIA semiconductors during molecular beam epitaxy using neutral free radicals. Minnesota Mining and Manufacturing Company, Kinney & Lange, September 28, 1993: US05248631 (28 worldwide citation)

A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular b ...


7
Robert M Park, James M DePuydt, Hwa Cheng, Michael A Haase: Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer. Minnesota Mining And Manufacturing Company, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, November 12, 1996: US05574296 (25 worldwide citation)

An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (N.sub.D /N.sub.A) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5.times.10.sup.15 cm .sup.-3 and ...


8
Hwa Cheng, James M DePuydt, Michael A Haase, Jun Qiu: Single quantum well II-VI laser diode without cladding. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, June 7, 1994: US05319219 (20 worldwide citation)

A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer is positioned be ...


9
Jun Qiu, Hwa Cheng, Michael A Haase, James M DePuydt: Method for making an ohmic contact for p-type group II-VI compound semiconductors. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Walter C Linder, May 25, 1993: US05213998 (18 worldwide citation)

A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se.sub.2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250.degree. C., but ...


10
James M DePuydt, Jun Qiu, Hwa Cheng, Michael A Haase: Ohmic contact for p-type group II-IV compound semiconductors. Minnesota Mining and Manufacturing Company, Gary L Griswold, Walter N Kirn, Lorraine R Sherman, December 28, 1993: US05274269 (18 worldwide citation)

A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a conductive electrode layer characterized by a Fermi energy. The co ...