1
Christian M Gronet, James F Gibbons: Rapid thermal heating apparatus and method. Applied Materials, Aldo J Test, October 13, 1992: US05155336 (158 worldwide citation)

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heati ...


2
Christian M Gronet, James F Gibbons: Rapid thermal heating apparatus and control therefor. Applied Materials, Fish & Richardson P C, November 18, 1997: US05689614 (87 worldwide citation)

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heati ...


3
Garret R Moddel, Lee A Christel, James F Gibbons: Electrically isolated semiconductor integrated photodiode circuits and method. Sera Solar Corporation, Flehr Hohbach Test Albritton & Herbert, September 16, 1986: US04612408 (75 worldwide citation)

An interconnected array of solar cell or photodiode devices is formed by a method which includes the steps of forming on one major surface of a semiconductor wafer a plurality of said devices, forming grooves in said one major surface extending partway into said substrate between adjacent said devic ...


4
Christian M Gronet, James F Gibbons: Rapid thermal heating apparatus and method utilizing plurality of light pipes. Applied Materials, Birgit E Morris, January 23, 1996: US05487127 (65 worldwide citation)

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heati ...


5
James F Gibbons: Semiconductor p-n junction solar cell and method of manufacture. January 4, 1977: US04001864 (64 worldwide citation)

There is described efficient semiconductor p-n junction solar cells which can be made from defect-rich semiconductor material. The solar cells include an extended electric field surrounding the p-n junction for extracting the photo-generated carriers in the presence of defects which would otherwise ...


6
Theodore I Kamins, David B Noble, Judy L Hoyt, James F Gibbons, Martin P Scott: Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2. Hewlett Packard Company, April 13, 1993: US05202284 (57 worldwide citation)

Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.


7
Christian M Gronet, James F Gibbons: Rapid thermal heating apparatus and method. Applied Materials, Birgit E Morris, May 31, 1994: US05317492 (51 worldwide citation)

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heati ...


8
James F Gibbons: Process for high temperature surface reactions in semiconductor material. Flehr Hohbach Test Albritton & Herbert, October 1, 1985: US04544418 (50 worldwide citation)

A process for controlled surface reactions in semiconductor material which includes rapidly heating the material to a high temperature, maintaining the temperature for a short time and cooling the material all while the surface is exposed to a substance which reacts at the surface.


9
Arnon Gat, Levy Gerzberg, James F Gibbons: Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam. Stanford University, Flehr Hohbach & Test, July 29, 1980: US04214918 (50 worldwide citation)

Low resistance, doped polycrystalline semiconductor connection patterns are fabricated by scanning a doped polycrystalline layer with a laser beam thereby increasing the crystal grain size, reducing defects in the grains, increasing charge carrier mobility and as a result reducing material resistivi ...


10
Garret R Moddel, James F Gibbons: Pulse anneal method for solar cell. Sera Solar Corporation, Flehr Hohbach Test Albritton & Herbert, September 3, 1985: US04539431 (45 worldwide citation)

A solar cell including a pulse annealed layer of crystalline, amorphous or polycrystalline semiconductor material of one conductivity type and either a layer of opposite conductivity type or a liquid electrolyte forming a collector junction therewith. A method of improving the characteristics of a s ...



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