1
Raymond A Fillion, Eric J Wildi, Charles S Korman, Sayed Amr El Hamamsy, Steven M Gasworth, Michael W DeVre, James F Burgess: Direct stacked and flip chip power semiconductor device structures. General Electric Company, Marvin Snyder, July 2, 1996: US05532512 (191 worldwide citation)

Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, wi ...


2
Raymond A Fillion, Otward M Mueller, James F Burgess: Wireless radio frequency power semiconductor devices using high density interconnect. General Electric Company, Ann M Agosti, Marvin Snyder, June 10, 1997: US05637922 (148 worldwide citation)

A power device component package includes a substrate supporting a drain lead, a source lead, and a gate lead. Each of the leads comprises an electrically conductive material having a thickness sufficient to form a high current contact. A power device component with component pads has an electricall ...


3
Guy L Babcock, Walter M Bryant, Constantine A Neugebauer, James F Burgess: Bonds between metal and a non-metallic substrate. General Electric Company, Geoffrey H Krauss, Joseph T Cohen, Jerome C Squillaro, November 23, 1976: US03993411 (59 worldwide citation)

A direct bond between metallic members and non-metallic members is achieved at elevated temperatures in a controlled reactive atmosphere without resorting to the use of electroless plating, vacuum deposition or intermediate metals. A metal member such as copper, for example, is placed in contact wit ...


4
James F Burgess, Homer H Glascock II, Harold F Webster, Constantine A Neugebauer, James A Loughran: Multilayer circuit board fabricated from silicon. General Electric Company, Marvin Snyder, James C Davis Jr, February 7, 1989: US04803450 (45 worldwide citation)

Multilayer circuit boards composed primarily of silicon and containing buried ground planes and buried conducting runs are fabricated in one embodiment by positioning conductive patterns (12) on the surfaces of silicon substrates and melting a solder component of the conductive patterns (12) and all ...


5
Constantine A Neugebauer, Robert J Satriano, James F Burgess, Homer H Glascock II, Victor A K Temple, Donald L Watrous: High current hermetic package having a lead extending through the package lid and a packaged semiconductor chip. General Electric Company, Marvin Snyder, James C Davis Jr, July 2, 1991: US05028987 (38 worldwide citation)

A hermetic, high current package for a semiconductor device includes wide flat leads which are bonded to the contact pads of the device and formed to extend through apertures in an insulating lid. The lid is sealed to a base and the apertures around the leads are sealed with solder to provide the he ...


6
Victor A K Temple, Donald L Watrous, Constantine A Neugebauer, James F Burgess, Homer H Glascock II: Hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip. General Electric Company, Marvin Snyder, James C Davis Jr, April 7, 1992: US05103290 (32 worldwide citation)

A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnet ...


7
Victor A K Temple, Donald L Watrous, Constantine A Neugebauer, James F Burgess, Homer H Glascock II: Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid. General Electric Company, Marvin Snyder, November 24, 1992: US05166773 (30 worldwide citation)

A hermetic semiconductor package includes a ceramic lid with the device leads extending vertically through the lid. The leads are mechanically retained within the apertures in the lid and direct bonded to the lid to provide a hermetic seal and a substantial lead density.


8
Harold F Webster, Constantine A Neugebauer, James F Burgess: Enhanced direct bond structure. General Electric Company, Marvin Snyder, James C Davis Jr, February 26, 1991: US04996116 (30 worldwide citation)

A direct (metal-metal compound eutectic) bond process is improved by disposing a eutectic/substrate-wetting enhancement layer on the substrate prior to performing the direct bond process to bond a metal foil to the substrate. Where the metal is copper, the direct bond process is rendered more effect ...


9
Victor A K Temple, Donald L Watrous, Constantine A Neugebauer, James F Burgess, Homer H Glascock II: Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip. General Electric Company, Marvin Snyder, James C Davis Jr, August 4, 1992: US05135890 (30 worldwide citation)

A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnet ...


10
James F Burgess, Wivina A A Rik DeDoncker, Donald W Jones, Constantine A Neugebauer: Integrated heat sink having a sinuous fluid channel for the thermal dissipation of semiconductor modules. General Electric Company, Marvin Snyder, March 8, 1994: US05293070 (29 worldwide citation)

An integrated heat sink module includes a sinuously channeled base and a bonded top surface electrode that is dielectrically isolated from the base. The top surface electrode acts as a common modular electrode capable of conducting heat to an ultimate cooling medium with no intervening thermal barri ...