1
Cheol Kyu Bok, Jae Chang Jung, Seung Chan Moon, Ki Soo Shin: Overcoating composition for photoresist and method for forming photoresist pattern using the same. Hynix Semiconductor, Marshall Gerstein & Borun, July 12, 2005: US06916594 (89 worldwide citation)

Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into ...


2
Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik: ArF photoresist copolymers. Hyundai Electronics, Townsend and Townsend and Crew, March 15, 2005: US06866984 (39 worldwide citation)

A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance ...


3
Jae Chang Jung, Cheol Kyu Bok, Ki Ho Baik: ArF photoresist copolymers. Hyundai Electronics, Townsend and Townsend and Crew, October 17, 2000: US06132926 (37 worldwide citation)

A photoresist including a copolymer prepared from bicycloalkene derivative, maleic anhydride and/or vinylene carbonate, which has molecular weight ranging from about 3,000 to 100,000. The photoresist can be used for submicrolithography employing deep ultra violety as a light source. In addition to b ...


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Jae Chang Jung: Method for forming a fine pattern of a semiconductor device. Hynix Semiconductor, Kilpatrick Townsend & Stockton, June 14, 2011: US07959818 (21 worldwide citation)

A method for forming a fine pattern of a semiconductor device includes forming a photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the photoresist pattern. The photoresist pattern is then removed to form a fine patter ...


6
Jae Chang Jung: Method of forming fine pattern of semiconductor device. Hynix Semiconductor, Townsend and Townsend and Crew, September 7, 2010: US07790357 (21 worldwide citation)

A method for forming a fine pattern of a semiconductor device includes forming a first photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the first photoresist pattern. The first photoresist pattern is removed to form ...


7
Jae Chang Jung, Chi Hyeong Roh, Min Ho Jung, Geun Su Lee, Ki Ho Baik: Oxabicyclo compound, a polymer-containing said compound, and a photoresist micro pattern forming method using the same. Hyundai Electronics, Townsend and Townsend and Crew, November 21, 2000: US06150069 (20 worldwide citation)

The present invention relates to oxabicyclo compounds and a method of preparing the same. The compounds of the present invention can be used as monomers for preparing a photoresist resin which is useful in photolithography processes using ultra-violet light sources, and are represented by the follow ...


8
Jae Chang Jung: Method for forming fine pattern of semiconductor device. Hynix Semiconductor, Townsend and Townsend and Crew, July 13, 2010: US07754591 (18 worldwide citation)

A method for forming a fine pattern of a semiconductor device include forming a stack structure including a 1st layer hard mask film to a nth layer hard mask film (n is an integer ranging from 2 or more) over an underlying layer formed over a semiconductor substrate. The nth layer hard mask film, th ...


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Jae Chang Jung: Method for forming fine pattern of semiconductor device. Hynix Semiconductor, Townsend & Townsend & Crew, January 1, 2008: US07314810 (18 worldwide citation)

A method for forming fine patterns of a semiconductor device includes forming hard mask patterns over an underlying layer. A first organic film is formed over the hard mask patterns. A second organic film is formed over the first organic film. The second organic film is planarized until the first or ...


10
Geun Su Lee, Cha Won Koh, Jae Chang Jung, Min Ho Jung, Ki Ho Baik: Photoresist monomers, polymers thereof, and photoresist compositions containing the same. Hyundai Electronics, Townsend and Townsend and Crew, May 22, 2001: US06235447 (18 worldwide citation)

The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represent ...