1
Jörg Rottstegge, Eberhard Kühn, Waltraud Herbst, Christian Eschbaumer, Christoph Hohle, Gertrud Falk, Michael Sebald: Process for sidewall amplification of resist structures and for the production of structures having reduced structure size. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Gregory L Mayback, May 17, 2005: US06893972 (177 worldwide citation)

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. A ...


2
Jörg Rottstegge, Eberhard Kühn, Waltraud Herbst, Christian Eschbaumer, Christoph Hohle, Gertrud Falk, Michael Sebald: Negative resist process with simultaneous development and silylation. Infineon Technologies, Laurence A Greenberg, Warner H Stemer, Gregory L Mayback, August 3, 2004: US06770423 (3 worldwide citation)

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist stru ...


3
Christoph Hohle, Jörg Rottstegge, Christian Eschbaumer, Michael Sebald: CHEMICALLY AMPLIFIED PHOTORESIST AND PROCESS FOR STRUCTURING SUBSTITUENTS USING TRANSPARENCY ENHANCEMENT OF RESIST COPOLYMERS FOR 157 NM PHOTOLITHOGRAPHY THROUGH THE USE OF FLUORINATED CINNAMIC ACID DERIVATIVES. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, October 19, 2004: US06806027 (2 worldwide citation)

Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl grou ...


4
Jörg Rottstegge: Process for structuring a photoresist by UV at less than 160 NM and then aromatic and/or alicyclic amplification. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, May 16, 2006: US07045274 (1 worldwide citation)

A process amplifies structured resists by utilizing a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The amplification agent includes aromatic and/or cycloaliphatic groups. An isocyanate group ...


5
Jörg Rottstegge, Eberhard Kühn, Waltraud Herbst, Christian Eschbaumer, Christoph Hohle, Michael Sebald: Silicon-containing resist for photolithography. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, May 30, 2006: US07052820 (1 worldwide citation)

A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the ph ...


6
Jörg Rottstegge, Eberhard Kühn, Christian Eschbaumer, Gertrud Falk, Michael Sebald: Negative resist process with simultaneous development and aromatization of resist structures. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, September 20, 2005: US06946236 (1 worldwide citation)

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying a ...


7
Jörg Rottstegge, Christian Eschbaumer, Christoph Hohle, Waltraud Herbst, Michael Sebald: Amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, July 6, 2004: US06759184 (1 worldwide citation)

A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a subs ...


8
Jörg Rottstegge, Waltraud Herbst, Gertrud Falk, Eberhard Kühn: Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, March 28, 2006: US07018784

The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar tha ...


9
Jörg Rottstegge, Christoph Hohle, Christian Eschbaumer, Michael Sebald, Wolf Dieter Domke: Silicon resist for photolithography at short exposure wavelengths and process for making photoresists. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, December 13, 2005: US06974655

A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhi ...


10
Jörg Rottstegge, Christian Eschbaumer, Christoph Hohle, Waltraud Herbst: Photoresists with reaction anchors for chemical consolidation of resist structures for exposures at 157 nm. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, April 25, 2006: US07033740

The chemically amplified resist includes a film-forming polymer, a photoacid generator, and a solvent. The film-forming polymer contains acid-labile groups which are eliminated under the action of an acid and liberate a group which brings about an increase in the solubility of the polymer in aqueous ...