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Jeewika Chandanie Ranaweera, Ivan Kalastirsky, Elvira Gulersen, Wai Tung Ng, Clement Andre T Salama: Method of fabricating a fast programmable flash E.sup.2 PROM cell. The University of Toronto Innovations Foundation, Fay Sharpe Fagan Minnich & McKee, March 7, 2000: US06034896 (87 worldwide citation)

A flash E.sup.2 PROM cell having source and drain regions disposed in a substrate, a channel region intermediate to the source and drain regions, a tunnel dielectric layer overlying the channel region, a floating gate overlying the tunnel dielectric layer, an inter-poly dielectric layer overlying th ...


2
Hanmant P Belgal, Ning Wu, Paul D Ruby, Andrew Vogan, Xin Guo, Ivan Kalastirsky, Mase J Taub: Apparatus, system, and method for improving read endurance for a non-volatile memory. Intel Corporation, Blakely Sokoloff Taylor & Zafman, February 10, 2015: US08954650

Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a fir ...