1
Issei Imahashi: Semiconductor processing system. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, December 9, 1997: US05695564 (213 worldwide citation)

A multi-chamber type process system for processing semiconductor wafers is constituted such that a plurality of units selected from process units, transfer units, interconnection units and in/out units are connected via gate valves. Each of the units has a casing with one or more openings through wh ...


2
Issei Imahashi, Kiichi Hama, Jiro Hata: Method for manufacturing a liquid crystal display substrate. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, May 9, 1995: US05413958 (117 worldwide citation)

An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irrad ...


3
Issei Imahashi: Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, August 16, 1994: US05338362 (95 worldwide citation)

An apparatus for forming a CVD film on semiconductor wafers includes a process chamber in which a rotary table capable of loading five wafers is provided. The interior of the process chamber is divided into six compartments by radially arranged partitions. The compartments comprise a wafer exchangin ...


4
Issei Imahashi, Kiichi Hama, Jiro Hata: Method of forming polycrystalling silicon film in process of manufacturing LCD. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, December 13, 1994: US05372836 (91 worldwide citation)

In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasma CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of th ...


5
Issei Imahashi, Nobuo Ishii: Plasma processing apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, August 30, 1994: US05342472 (69 worldwide citation)

Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opp ...


6
Issei Imahashi: Plasma processing apparatus with a rotating electromagnetic field. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt P C, September 10, 1996: US05554223 (65 worldwide citation)

A plasma process apparatus includes a high-vacuum container in which a semiconductor wafer is horizontally mounted on a susceptor, and into which a process gas such as an etching gas is supplied. Between the susceptor and the container a high-frequency voltage is applied. Around the outer periphery ...


7
Issei Imahashi, Kiichi Hama, Jiro Hata: Apparatus for manufacturing a liquid crystal display substrate, and apparatus for evaluating semiconductor crystals. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, June 25, 1996: US05529630 (65 worldwide citation)

An amorphous silicon film is formed on a glass substrate by a CVD method, and then the island regions of the amorphous silicon film is changed to a plurality of polycrystalline silicon regions which are arranged in a line and apart with each other in a predetermined distanced by intermittently irrad ...


8
Issei Imahashi, Teruo Asakawa: Positioning stage having a vibration suppressor. Telmec, Price Heneveld Huizenga & Cooper, June 25, 1985: US04525659 (61 worldwide citation)

A first stage adapted to be moved in predetermined directions by a first driving device is provided in a machine base supported from a foundation by an intermediary of resilient means. This first stage is provided a second stage adapted to be moved in the directions at right angles to the directions ...


9
Issei Imahashi: Semiconductor wafer heat treatment apparatus. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, May 9, 1995: US05414244 (39 worldwide citation)

A heat treatment apparatus according to the present invention includes a process tube which heat rays are able to penetrate, a holding member for holding an object to be treated in the process tube, two temperature regulation plates arranged opposite and close to the object held by the holding membe ...


10
Issei Imahashi, Takayuki Fukasawa: Low frequency electron cyclotron resonance plasma processor. Tokyo Electron, Oblon Spivak McClelland Maier & Neustadt, July 16, 1996: US05537004 (31 worldwide citation)

A plasma processor includes a cylindrical processing chamber storing a semiconductor wafer to be processed, a slot antenna, wound around the outside of a peripheral wall of the processing chamber, for feeding an electromagnetic wave of several tens MHz to the chamber, and an electromagnetic coil, pr ...



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