1
Masaaki Hirooka, Kyosuke Ogawa, Shunichi Ishihara, Isamu Shimizu: Process for forming deposition film. Canon Kabushiki Kaishi, Fitzpatrick Cella Harper & Scinto, May 30, 1989: US04835005 (65 worldwide citation)

A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.


2
Shunichi Ishihara, Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu: Process for forming deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, February 23, 1988: US04726963 (58 worldwide citation)

A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is rea ...


3
Shunichi Ishihara, Keishi Saito, Shunri Oda, Isamu Shimizu: Process for the preparation of photoelectromotive force member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, August 25, 1987: US04689093 (56 worldwide citation)

Process for preparing a photoelectromotive force member by forming a photoelectric conversion layer on a substrate by: (a) generating an active species by the action of microwave energy on a substance in a space leading to a film forming space containing a substrate; (b) generating a precursor by th ...


4
Masaaki Hirooka, Shunichi Ishihara, Junichi Hanna, Isamu Shimizu: Formation of deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, April 14, 1987: US04657777 (53 worldwide citation)

A method for forming a deposited film is provided which comprises forming a gas atmosphere containing an active species (a) obtained by decomposition of a silicon halide represented by the formula Si.sub.n X.sub.2n+2 (n is an integer of 1 or more and X represents a halogen atom) and at least one com ...


5
Isamu Shimizu, Shigeru Shirai, Eiichi Inoue: Photoconductive member with .alpha.-Si(C) barrier layer. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 19, 1983: US04394425 (49 worldwide citation)

A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration ...


6
Isamu Shimizu, Shigeru Shirai, Eiichi Inoue: Photoconductive member with .alpha.-Si(N) barrier layer. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, July 19, 1983: US04394426 (39 worldwide citation)

A photoconductive member comprise a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration o ...


7
Isamu Shimizu, Shigeru Shirai, Eiichi Inoue: Photoconductive member having barrier and depletion layers. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, November 16, 1982: US04359514 (38 worldwide citation)

A photoconductive member which is stable in its electrical and optical characteristics, not influenced by circumstances for its use, and possesses extremely high sensitivity to light, remarkably high anti-photo-fatigue property, and deterioration-resistant against repeated use, the photoconductive m ...


8
Isamu Shimizu, Kozo Arao, Eiichi Inoue: Photoconductive member. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, December 25, 1984: US04490450 (37 worldwide citation)

A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material contai ...


9
Shunichi Ishihara, Shigeru Ohno, Masahiro Kanai, Shunri Oda, Isamu Shimizu: Process for forming deposited film. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, March 1, 1988: US04728528 (35 worldwide citation)

A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reacti ...


10
Isamu Shimizu, Shigeru Shirai, Eiichi Inoue: Photoconductive member with two amorphous silicon layers. Canon Kabuskiki Kaisha, Fitzpatrick Cella Harper & Scinto, October 11, 1983: US04409308 (32 worldwide citation)

A photoconductive member comprises a support, a photoconductive layer constituted of an amorphous material containing silicon atoms as matrix and containing hydrogen atoms or halogen atoms, and an intermediate layer provided between them, said intermediate layer having a function to bar penetration ...