1
Isaiah Oladeji
Isaiah O Oladeji: Film growth system and method. Sisom Thin Films, Robert J Lauf, September 14, 2010: US07793611 (4 worldwide citation)

An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodi ...


2
Isaiah Oladeji
Isaiah O Oladeji, Alan Cuthbertson: Method for fabricating conducting plates for a high-Q MIM capacitor. Atmel Corporation, Fish & Richardson P C, September 20, 2011: US08022548 (1 worldwide citation)

A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The ...


3
Isaiah Oladeji
Isaiah O Oladeji: Method for fabricating copper-containing ternary and quaternary chalcogenide thin films. Sisom Thin Films, Robert J Lauf, July 24, 2012: US08225744 (1 worldwide citation)

An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a tim ...


4
Isaiah Oladeji
Isaiah O Oladeji: Method for fabricating copper-containing ternary and quaternary chalcogenide thin films. Sisom Thin Films, Robert J Lauf, July 5, 2011: US07972899 (1 worldwide citation)

An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a tim ...


5
Isaiah Oladeji
Isaiah O Oladeji: Film growth system and method. Sisom Thin Films, Robert J Lauf, April 20, 2010: US07700161 (1 worldwide citation)

An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains multiple ligands to further control temp ...


6
Isaiah Oladeji
Isaiah O Oladeji, Scott Jessen, Joseph Ashley Taylor: Mask layer and interconnect structure for dual damascene semiconductor manufacturing. Beusse Brownlee Bowdoin & Wolter P A, April 3, 2003: US20030064582-A1 (1 worldwide citation)

A novel mask layer is used in the dual damascene construction of an interconnect structure of an integrated circuit device. The interconnect structure has a low-k dielectric material. The mask layer has a passivation film deposited on the low-k dielectric material, a barrier film is deposited over t ...


7
Isaiah Oladeji
Isaiah O Oladeji, Alan Cuthbertson: Method for fabricating conducting plates for a high-Q MIM capacitor. Atmel Corporation, Schwegman Lundberg & Woessner P A, October 13, 2009: US07601604

A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The ...


8
Isaiah Oladeji
Isaiah O Oladeji, Alan Cuthbertson: Method for fabricating a thick copper line and copper inductor resulting therefrom. Atmel Corporation, Schwegman Lundberg & Woessner P A, August 17, 2010: US07776705

A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectr ...


9
Isaiah Oladeji
Isaiah O Oladeji: Method of forming a solid state cathode for high energy density secondary batteries. Sisom Thin Films, Robert J Lauf, June 18, 2013: US08465556

A method for making a solid state cathode comprises the following steps: forming an alkali free first solution comprising at least one transition metal and at least two ligands; spraying this solution onto a substrate that is heated to about 100 to 400° C. to form a first solid film containing the t ...


10
Isaiah Oladeji
Isaiah O Oladeji: Zinc oxide film and method for making. Sisom Thin Films, Robert J Lauf, April 9, 2013: US08414971

A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of O, and mu ...



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