1
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Monolithic three dimensional array of charge storage devices containing a planarized surface. Matrix Semiconductor, Foley & Lardner, April 19, 2005: US06881994 (254 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


2
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher Petti, Igor G Kouznetzov, Mark G Johnson, Paul M Farmwald, Brad Herner: Dense arrays and charge storage devices. Sandisk 3D, Foley & Lardner, October 31, 2006: US07129538 (136 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


3
Thomas H Lee, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov: Rail stack array of charge storage devices and method of making same. Matrix Semiconductor, Foley & Lardner, January 31, 2006: US06992349 (72 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


4
Thomas H Lee, Vivek Subramanian, James M Cleeves, Mark G Johnson, Paul Michael Farmwald, Igor G Kouznetzov: Dense arrays and charge storage devices. SanDisk 3D, The Marbury Law Group PLLC, March 17, 2015: US08981457 (13 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


5
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Dense arrays and charge storage devices, and methods for making same. Foley & Lardner, Washington Harbour, March 7, 2002: US20020028541-A1 (11 worldwide citation)

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


6
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Dense arrays and charge storage devices. Matrix Semiconductor, Foley And Lardner, October 21, 2004: US20040206996-A1

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


7
Thomas H Lee, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov: Rail stack array of charge storage devices and method of making same. Matrix Semiconductor, Foley And Lardner, October 28, 2004: US20040214379-A1

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


8
Igor G Kouznetzov: Dense arrays and charge storage devices. Sandisk 3d, Foley And Lardner, February 8, 2007: US20070029607-A1

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


9
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Dense arrays and charge storage devices. SanDisk 3D, June 30, 2011: US20110156044-A1

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.


10
Thomas H Lee, Vivek Subramanian, James M Cleeves, Andrew J Walker, Christopher J Petti, Igor G Kouznetzov, Mark G Johnson, Paul Michael Farmwald, Brad Herner: Dense arrays and charge storage devices. SanDisk 3D, September 6, 2012: US20120223380-A1

There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.