1
Anne Chiang, I Wei Wu, Tiao Yuan Huang: Formation of large grain polycrystalline films. Xerox Corporation, Serge Abend, February 27, 1990: US04904611 (45 worldwide citation)

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface ...


2
Chi Jain Wen, Dai Liang Ting, Li Sen Chuang, Shyuan Jeng Ho, I Wei Wu: Double-sided LCD panel. Toppoly Optoelectronics, Birch Stewart Kolasch & Birch, November 16, 2004: US06819380 (45 worldwide citation)

A double-sided LCD panel is comprised of a transflective LCD panel and a light-emitting device. One surface of the transflective panel is used in the transparent mode, and the other surface is used in the reflective mode, achieving the goal of double-sided display. The light-emitting device may func ...


3
Tiao Yuan Huang, Anne Chiang, I Wei Wu: Simultaneously deposited thin film CMOS TFTs and their method of fabrication. Xerox Corporation, Serge Abend, August 21, 1990: US04951113 (36 worldwide citation)

A thin film SOI CMOS device wheren the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor l ...


4
Yaw Ming Tsai, Hsiu Chun Hsieh, Shih Chang Chang, Chen Ting Huang, I Wei Wu: Thin film transistor with self-aligned intra-gate electrode. Toppoly Optoelectronics, Madson & Metcalf, March 7, 2006: US07009204 (33 worldwide citation)

A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped ...


5
Michael G Hack, I Wei Wu: Array having multiple channel structures with continuously doped interchannel regions. Xerox Corporation, December 30, 1997: US05703382 (29 worldwide citation)

Cell circuitry in an array on a substrate includes a TFT or other structure with a series of two or more channels and with an intrachannel region between each pair of adjacent channels in the series. Each intrachannel region has a continuously distribution of dopant particles and the distribution of ...


6
Tiao Yuan Huang, Anne Chiang, I Wei Wu: Method of fabrication a thin film SOI CMOS device. Xerox Corporation, Serge Abend, January 29, 1991: US04988638 (28 worldwide citation)

A thin film SOI CMOS device wherein the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor ...


7
I Wei Wu: Circuitry with gate line crossing semiconductor line at two or more channels. Xerox Corporation, March 4, 1997: US05608557 (26 worldwide citation)

Circuitry formed at a surface of a substrate includes first and second lines in first and second layers of the circuitry. The first line includes semiconductor material and extends between first and second connecting points at which it connects electrically to other components. The second line is co ...


8
I Wei Wu: Forming array with metal scan lines to control semiconductor gate lines. Xerox Corporation, September 17, 1996: US05557534 (17 worldwide citation)

Array circuitry formed at a surface of a substrate includes a first conductive layer with M scan lines, a second conductive layer with N data lines, and cell circuitry for a region in which the mth scan line and the nth data line cross. The cell circuitry includes a component with a data lead for re ...


9
Anne Chiang, Scott A Elrod, Babur Hadimioglu, Tiao Yuan Huang, Takamasa J Oki, I Wei Wu: Thin film varactors. Xerox Corporation, August 6, 1991: US05038184 (15 worldwide citation)

This disclosure relates to semiconductor varactors, such as thin film poly-Si varactors, which have larger effective gate areas in accumulation than in depletion, together with capacitive switching ratios which are essentially determined by the ratio of their effective gate area in accumulation to t ...


10
I Wei Wu: Array with metal scan lines controlling semiconductor gate lines. Xerox Corporation, February 4, 1997: US05600155 (13 worldwide citation)

Array circuitry formed at the surface of a substrate includes M scan lines that cross N data lines. The array circuitry also includes cell circuitry connected to the mth scan line and the nth data line. The cell circuitry includes a component with a data lead for receiving signals from or providing ...