1
Hsiang Lan Lung: Self-aligned, programmable phase change memory. Macronix International, Mark A Haynes, Haynes Beffel & Wolfeld, June 17, 2003: US06579760 (299 worldwide citation)

A self-aligned, nonvolatile memory structure based upon phase change materials, including chalcogenides, can be made with a very small area on an integrated circuit. The manufacturing process results in self-aligned memory cells requiring only two array-related masks defining the bit lines and word ...


2
Hsiang Lan Lung: Spacer chalcogenide memory method and device. Macronix International, Ernest J Beffel Jr, Haynes Beffel & Wolfeld, March 8, 2005: US06864503 (230 worldwide citation)

The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.


3
Hsiang Lan Lung: Self-aligned small contact phase-change memory method and device. Macronix International, Ernest J Beffel Jr, Haynes Beffel & Wolfeld, May 22, 2007: US07220983 (201 worldwide citation)

The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalco ...


4
Hsiang Lan Lung: High density chalcogenide memory cells. Macronix International, Stout Uxa Buyan & Mullins, June 27, 2006: US07067865 (184 worldwide citation)

A non-volatile memory cell is constructed from a chalcogenide alloy structure and an associated electrode side wall. The electrode is manufactured with a predetermined thickness and juxtaposed against a side wall of the chalcogenide alloy structure, wherein at least one of the side walls is substant ...


5
Hsiang Lan Lung: Spacer chalcogenide memory method. Macronix International, Mark A Haynes, Haynes Beffel & Wolfeld, April 25, 2006: US07033856 (162 worldwide citation)

The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.


6
Hsiang Lan Lung: Thermally contained/insulated phase change memory device and method (combined). Macronix International, Haynes Beffel & Wolfeld, July 1, 2008: US07394088 (124 worldwide citation)

A memory device with improved heat transfer characteristics. The device first includes a dielectric material layer; first and second electrodes, vertically separated and having mutually opposed contact surfaces. A phase change memory element is encased within the dielectric material layer, including ...


7
Shih Hung Chen, Hsiang Lan Lung: Thin film plate phase change ram circuit and manufacturing method. Macronix International, Mark Haynes, Haynes Beffel & Wolfeld, July 3, 2007: US07238994 (122 worldwide citation)

A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes electrode pairs. Electrode pairs inclu ...


8
Hsiang Lan Lung: Method of manufacturing self-aligned, programmable phase change memory. Macronix International, Mark A Haynes, Haynes Beffel & Wolfeld, June 15, 2004: US06750101 (120 worldwide citation)

A self-aligned, nonvolatile memory structure based upon phase change materials, including chalcogenides, can be made with a very small area on an integrated circuit. The manufacturing process results in self-aligned memory cells requiring only two array-related masks defining the bit lines and word ...


9
Hsiang Lan Lung, Shih Hung Chen: Thin film fuse phase change RAM and manufacturing method. Macronix International, Haynes Beffel & Wolfeld, January 22, 2008: US07321130 (117 worldwide citation)

A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode a ...


10
Hsiang Lan Lung: Pipe shaped phase change memory. Macronix International, Haynes Beffel & Wolfeld, July 8, 2008: US07397060 (116 worldwide citation)

A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped member. An integrated circuit including an array of pipe-shape ...