1
Donald R Dias, Daniel C Guterman, Robert J Proebsting, Horst Leuschner: MOS Random access memory cell with nonvolatile storage. Mostek Corporation, April 9, 1985: US04510584 (46 worldwide citation)

A nonvolatile random access memory cell (10) includes a static random access memory circuit and a corresponding nonvolatile memory circuit. The volatile memory circuit operates in a conventional manner and has first and second data states. Upon receipt of a store command signal a charge storage node ...


2
Horst Leuschner: MOS Bandgap reference. Motorola, Anthony J Sarli Jr, Vince Ingrassia, Jeffrey Van Myers, September 1, 1981: US04287439 (35 worldwide citation)

A bandgap voltage reference source is provided which is temperature stable or temperature controlled and can be made by standard CMOS process. The reference has two substrate bipolar transistors with the emitter current density of one of the transistors being larger than the emitter current density ...


3
Horst Leuschner: Back bias generator. SGS Semiconductor Corporation, M David Shapiro, December 9, 1986: US04628214 (21 worldwide citation)

The invention comprises an improved back bias generator for an integrated circuit wherein a transistor circuit first acts as an isolation device during the charging phase of a charge pump capacitor and acts as a coupling device during a discharge phase of the capacitor, thus providing a higher back ...


4
George John Ehni III, Horst Leuschner: Solid state television channel selection system. Texas Instruments Incorporated, Harold Levine, James T Comfort, James O Dixon, June 21, 1977: US04031474 (19 worldwide citation)

The specification discloses various embodiments of solid state television channel selection systems. The systems provide sequential and/or parallel access of television channels by operation of simple pushbutton or sense touch switches on the control panel of the television set, as well as sequentia ...


5
Bhasker Rao, Horst Leuschner, Ashok Chalaka: Method of making a semiconductor device with integrated RC network and schottky diode. California Micro Devices, Flehr Hohbach Test Albritton & Herbert, May 7, 1996: US05514612 (18 worldwide citation)

A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the seri ...


6
Bhasker Rao, Horst Leuschner, Ashok Chalaka: Semiconductor device with integrated RC network and schottky diode. California Micro Devices, Flehr Hohbach Test Albritton & Herbert, June 23, 1998: US05770886 (18 worldwide citation)

A semiconductor device which has a resistor, a capacitor, a Schottky diode, and an ESD protection device all formed on a single semiconductor substrate. The resistor and the capacitor are coupled together in series. The Schottky diode and the ESD protection device are coupled in parallel to the seri ...


7
Bhasker Rao, Horst Leuschner, Ashok Chalaka: Semiconductor device with integrated RC network and Schottky diode. Flehr Hohbach Test Albritton & Herbert, October 11, 1994: US05355014 (17 worldwide citation)

A semiconductor device which has a resistor, a capacitor, and a Schottky diode all formed on a single semiconductor substrate. The capacitor comprises a dielectric region between two metal regions. The resistor comprises an N.sup.+ -type well. The Schottky diode comprises an N-type tub, a metal regi ...


8
Clinton C K Kuo, Horst Leuschner: Sense amplifier using different threshold MOS devices. Motorola, James L Clingan Jr, July 10, 1984: US04459497 (14 worldwide citation)

A sense amplifier quickly charges a column line to a first predetermined voltage level with first, second and third transistors and then charges the column to a second predetermined voltage by using only the second and third transistors. The second and third transistors continue charging to the seco ...


9
Horst Leuschner: Electronic timepiece. Texas Instruments Incorporated, Rene E Grossman, Stephen S Sadacca, January 3, 1978: US04065916 (12 worldwide citation)

An electronic timepiece includes a shutdown latch circuit. The latch circuit is initially set by insertion of a battery power source in the electronic timepiece. When the latch circuit is set, all other circuits in the timepiece, and particularly the display circuits, are turned off to conserve batt ...


10
Horst Leuschner: Electrostatic discharge input protection network. SGS Semiconductor Corporation, M David Shapiro, February 9, 1988: US04724471 (10 worldwide citation)

An improved input network for MOS semiconductor devices intended to increase the device resistance to electrostatic discharge in the input circuit. A series of features comprising round and concentric round contacts and buried contacts, a layer of polycrystalline silicon disposed between the metal i ...